Light emitting device with reduced epi stress
View Patent ↗Elements are added to a light emitting device to reduce the stress within the light emitting device caused by thermal cycling. Alternatively, or additionally, materials are selected for forming contacts within a light emitting device based on their coefficient of thermal expansion and their relative cost, copper alloys being less expensive than gold, and providing a lower coefficient of thermal expansion than copper. Elements of the light emitting device may also be structured to distribute the stress during thermal cycling.
1. A light emitting device comprising:
a submount having first contacts separated by at least one first channel,
a light emitting structure having a metal layer including second contacts separated by at least one second channel, and
one or more elements added to the light emitting structure to reduce a thermally induced stress in the light emitting structure in a vicinity of the second channel, wherein the one or more elements include a single gap in each second contact, each single gap being closer to the second channel than to the outer edge of the corresponding second contact, the single gaps cutting through the second contacts, the single gaps being situated to distribute the stress beyond the vicinity of the second channel.
2. The light emitting device of claim 1 , wherein the one or more elements include a buffer layer between the metal layer and a light emitting element in the light emitting structure, the buffer layer having a higher compliancy than the metal layer.
3. The light emitting device of claim 2 , wherein the buffer layer includes gold.
4. The light emitting device of claim 1 , wherein the one or more elements include a filler material within the second channel, the filler material being selected based on its coefficient of thermal expansion.
5. The light emitting device of claim 1 , wherein the metal layer includes an alloy having a coefficient of thermal expansion that is less than a coefficient of thermal expansion of copper within a temperature range of (20-250)° C.
6. The light emitting device of claim 5 , wherein the alloy includes a copper alloy.
7. The light emitting device of claim 6 , wherein the copper alloy includes at least one of: CuNi, CuNiTi, CuW, CuFe, and CuMo.
8. The light emitting device of claim 6 , wherein the copper alloy includes CuNiTi.
9. The light emitting device of claim 5 , wherein the coefficient of thermal expansion of the alloy is less than 10 ppm/K within a temperature range of (20-250)° C.
10. The light emitting device of claim 5 , wherein the coefficient of thermal expansion of the alloy is less than 8 ppm/K within a temperature range of (20-250)° C.
11. The light emitting device of claim 5 , wherein the second contacts are each coupled to a corresponding first contact by a connection material that has a density that varies form a higher density to an area adjacent the second channel to a lower density in an area distant form the second channel.
12. A light emitting device comprising:
a submount having first contacts separated by at least one first channel,
a light emitting structure having a metal layer including second contacts separated by at least one second channel, and
one or more elements added to the light emitting structure to reduce a thermally induced stress in the light emitting structure in a vicinity of the second channel, wherein the one or more elements include one or more gaps in the second contacts proximate to the second channel, the gaps cutting through the second contacts, the gaps being situated to distribute the stress beyond the vicinity of the second channel, wherein the one or more elements include a filler material within the first channel, the filler material being selected based on its coefficient of thermal expansion.