CLEANING COMPOSITION FOR SEMICONDUCTOR SUBSTRATE AND CLEANING METHOD
A cleaning composition for a semiconductor substrate contains a solvent, and a polymer that includes a fluorine atom, a silicon atom or a combination thereof. The content of water in the solvent is preferably no greater than 20% by mass. The cleaning composition preferably further contains an organic acid which is a non-polymeric acid. The organic acid is preferably a polyhydric carboxylic acid. The acid dissociation constant of the polymer is preferably less than that of the organic acid. The solubility of the organic acid in water at 25° C. is preferably no less than 5% by mass. The organic acid is preferably a solid at 25° C.
1 . A cleaning composition for a semiconductor substrate comprising:
a solvent; and
a polymer comprising a fluorine atom, a silicon atom or a combination thereof.
2 . The cleaning composition according to claim 1 , wherein a content of water in the solvent is no greater than 20% by mass.
3 . The cleaning composition according to claim 1 , further comprising an organic acid which is a non-polymeric acid.
4 . The cleaning composition according to claim 3 , wherein the organic acid is a polyhydric carboxylic acid.
5 . The cleaning composition according to claim 3 , wherein an acid dissociation constant of the polymer is smaller than an acid dissociation constant of the organic acid.
6 . The cleaning composition according to claim 3 , wherein a solubility of the organic acid in water at 25° C. is no less than 5% by mass.
7 . The cleaning composition according to claim 3 , wherein the organic acid is a solid at 25° C.
8 . A cleaning method comprising:
coating a cleaning composition on a surface of a semiconductor substrate to form a film, the cleaning composition comprising a solvent and a polymer which comprises a fluorine atom, a silicon atom or a combination thereof; and
removing the film from the substrate.
9 . The cleaning method according to claim 8 , wherein a content of water in the solvent is no greater than 20% by mass.
10 . The cleaning method according to claim 8 , further comprising an organic acid which is a non-polymeric acid.
11 . The cleaning method according to claim 10 , wherein the organic acid is a polyhydric carboxylic acid.
12 . The cleaning method according to claim 10 , wherein an acid dissociation constant of the polymer is smaller than an acid dissociation constant of the organic acid.
13 . The cleaning method according to claim 10 , wherein a solubility of the organic acid in water at 25° C. is no less than 5% by mass.
14 . The cleaning method according to claim 10 , wherein the organic acid is a solid at 25° C.