Image sensors and methods of fabricating the same

1. An image sensor comprising:

a substrate;

a photoelectric conversion element that is disposed in the substrate;

a first storage region that is disposed in the substrate and that is spaced apart from the photoelectric conversion element;

a gate that is on the first storage region; a light shielding layer that covers the gate;

a first dielectric layer that is between the gate and the light shielding layer and that extends onto a top surface of the substrate;

an interlayer insulating structure on the light shielding layer and the substrate; and

a micro-lens that is on the interlayer insulating structure and that overlaps with the photoelectric conversion element,

wherein the light shielding layer comprises: a first portion that is on a sidewall of the gate; and a second portion that is on a top surface of the gate,

wherein the first portion of the light shielding layer has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion,

wherein the first thickness of the first portion of the light shielding layer is greater than a second thickness of the second portion of the light shielding layer,

wherein a top surface of a first portion of the first dielectric layer disposed below the light shielding layer is recessed relative to a top surface of a second portion of the first dielectric layer exposed by the light shielding layer, and

wherein the first dielectric layer is a single layer.

2. The image sensor of claim 1 , wherein the top surface of the first portion of the light shielding layer is coplanar with a top surface of the second portion of the light shielding layer.

3. The image sensor of claim 1 , wherein a thickness of the first portion of the first dielectric layer is smaller than a thickness of the second portion of the first dielectric layer.

4. The image sensor of claim 1 , further comprising a second dielectric layer disposed on the second portion of the first dielectric layer.

5. The image sensor of claim 4 , wherein the first dielectric layer further comprises a third portion disposed between the gate and the first portion of the first dielectric layer, and

wherein the second dielectric layer is further disposed between the third portion of the first dielectric layer and the light shielding layer.

6. The image sensor of claim 5 , wherein at least a portion of of the first portion of the light shielding layer is in contact with the first portion of the first dielectric layer.

7. The image sensor of claim 4 , wherein the first portion of the light shielding layer comprises: a first bottom surface; and a second bottom surface that is between the first bottom surface and the gate,

wherein the first bottom surface is positioned at a lower level than a top surface of the second dielectric layer, and

wherein the second bottom surface is coplanar with the top surface of the second dielectric layer.

8. The image sensor of claim 6 , wherein the dielectric layer further comprises: a third dielectric layer that is stacked on the second dielectric layer.

9. The image sensor of claim 8 , wherein the first portion of the light shielding layer that is at a side of the gate comprises: a first bottom surface that is positioned at a lower level than a top surface of the third dielectric layer; and a second bottom surface that is disposed between the gate and the first bottom surface,

wherein the second bottom surface is coplanar with the top surface of the third dielectric layer, and

wherein the first portion of the light shielding layer that is at another side of the gate comprises: a third bottom surface that is coplanar with the top surface of the third dielectric layer.

10. The image sensor of claim 1 , wherein the first dielectric layer includes a silicon nitride layer.

11. The image sensor of claim 4 , wherein the second dielectric layer includes a silicon oxide layer.

12. The image sensor of claim 1 , further comprising:

a separation region in the substrate between the photoelectric conversion element and a side of the first storage region;

a well region in the substrate under the first storage region; and

a second storage region in the substrate and spaced apart from another side of the first storage region.

13. The image sensor of claim 12 , wherein the gate comprises a shutter gate, the image sensor further comprising:

a transfer gate that is on the substrate between the first storage region and the second storage region, and

wherein the transfer gate is exposed by the light shielding layer.

14. The image sensor of claim 12 , wherein the gate comprises a shutter gate, the image sensor further comprising:

a transfer gate that is on the substrate between the first storage region and the second storage region,

wherein the light shielding layer extends onto a top surface of the transfer gate.

15. An image sensor comprising:

a substrate including a pixel region and a peripheral circuit region;

a photoelectric conversion element that is in the pixel region of the substrate;

a storage region that is disposed in the pixel region of the substrate and that is spaced apart from the photoelectric conversion element;

a shutter gate that is on the storage region in the pixel region; a peripheral circuit gate that is in the peripheral circuit region;

a light shielding layer that includes a first portion that covers a sidewall of the shutter gate and a second portion that covers a top surface of the shutter gate;

a first dielectric layer that is between the shutter gate and the light shielding layer and that is on the peripheral circuit gate;

an interlayer insulating structure that covers the light shielding layer on the substrate and a portion of the dielectric layer that is in the peripheral circuit region;

a micro-lens that is on the interlayer insulating structure and that overlaps with the photoelectric conversion element; and

a color filter that is in the interlayer insulating structure and that is between the micro-lens and the photo-electric conversion element,

wherein the first portion of the light shielding layer has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion, and

wherein the first thickness of the first portion of the light shielding layer is greater than a second thickness of the second portion of the light shielding layer,

wherein a first top surface of a first portion of the first dielectric layer disposed below the light shielding layer is recessed relative to a top surface of a second portion of the first dielectric layer exposed by the light layer, and

wherein the first dielectric layer is a single layer.

16. The image sensor of claim 15 , wherein the storage region comprises a first storage region, the sensor further comprising:

a separation region in the substrate between the photoelectric conversion element and a side of the first storage region;

a well region in the substrate under the first storage region;

a second storage region in the substrate and spaced apart from another side of the first storage region; and

a transfer gate that is on the substrate between the first storage region and the second storage region.

17. The image sensor of claim 16 ,

wherein the light shielding layer extends onto a top surface of the transfer gate, and

wherein a thickness of the first portion of the first dielectric layer is smaller than a thickness of the second portion of the first dielectric layer.

18. The image sensor of claim 15 ,

further comprising a second dielectric layer disposed on the second portion of the first dielectric layer and between a portion of the first portion of the first dielectric layer and the light shielding layer, and

wherein at least a portion of the first portion of the light shielding layer is in contact with an other portion of the first portion of the first dielectric layer.

19. The image sensor of claim 15 , further comprising a second dielectric layer disposed on the second portion of the first dielectric layer and between a portion of the first portion of the first dielectric layer and the light shielding layer,

wherein the first portion of the light shielding layer comprises: a first bottom surface; and a second bottom surface that is between the first bottom surface and the shutter gate,

wherein the first bottom surface is positioned at a lower level than a top surface of the second dielectric layer, and

wherein the second bottom surface is coplanar with the top surface of the second dielectric layer.

20. An image sensor comprising:

a substrate;

a storage region that is disposed in the substrate;

a gate that is on the storage region;

a light shielding layer that covers the gate; and

a dielectric layer that is between the gate and the light shielding layer and that extends onto a top surface of the substrate;

wherein the light shielding layer comprises: a first portion that is on a sidewall of the gate; and a second portion that is on a top surface of the gate,

wherein the first portion of the light shielding layer has a first thickness corresponding to a vertical height from a bottom surface of the first portion to a top surface of the first portion,

wherein the first thickness of the first portion of the light shielding layer is greater than a second thickness of the second portion of the light shielding layer,

wherein a top surface of a first portion of the dielectric layer disposed below the light shielding layer is coplanar with a top surface of a second portion of the dielectric layer exposed by the light shielding layer, and

wherein the dielectric layer is a single layer.