Correlated electron switch

1. A method, comprising:

controlling injection of a plurality of electrons to a correlated electron material of a correlated electron switch device such that the correlated electron material enters a first impedance state; and

controlling injection of a plurality of holes to the correlated electron material such that the correlated electron material enters a second impedance state, the first and second impedance states respectively including particular approximate resistance and capacitance characteristics, wherein the capacitance of the second impedance state exceeds the capacitance of the first impedance state.

2. The method of claim 1 , wherein the controlling the injection of the plurality of electrons to the correlated electron material causes a voltage across the correlated electron material to be greater than a set voltage, and/or wherein the controlling the injection of the plurality of holes to the correlated electron material causes the voltage across the correlated electron material to be equal to or greater than a reset voltage.

3. The method of claim 2 , wherein the voltage across the correlated electron material produces a current density in the correlated electron material equal to or greater than a set current density and/or a set current threshold, and/or wherein the voltage across the correlated electron material produces the current density in the correlated electron material equal to or greater than a reset current density and/or a reset current threshold.

4. The method of claim 2 , further comprising exceeding the set voltage across the correlated electron material and a set current density through the correlated electron material, and/or exceeding the reset voltage across the correlated electron material and a reset current density through the correlated electron material.

5. The method of claim 1 , wherein the first impedance state represents a first value, symbol, parameter, or condition, or a combination thereof, and wherein the second impedance state represents a second value, symbol, parameter, or condition, or a combination thereof.

6. The method of claim 2 , wherein at least one of the reset voltage, the set voltage, and/or a difference between the set voltage and the reset voltage are proportional to one or more physical properties of the correlated electron material.

7. The method of claim 6 , wherein the one or more physical properties of the correlated electron material comprise one or more of a strong electron potential due to localization and/or a correlation of electrons, and wherein a difference between the set voltage and the reset voltage indicates a size of at least one of a write window and/or a programming window.

8. The method of claim 1 , further comprising switching between the first impedance state and the second impedance state at least in part by a disproportionation reaction.

9. The method of claim 1 , further comprising controlling a current through the correlated electron material at least in part by dynamically applying an external compliance condition based, at least in part, on an external current limited during a write operation to place the correlated electron material in the first impedance state.

10. A method, comprising:

applying a voltage to a correlated electron material as part of a read operation for a correlated electron switch device; and

detecting a particular impedance state of a plurality of particular impedance states of the correlated electron material, wherein individual impedance states of the plurality of particular impedance states comprise particular approximate resistance characteristics and particular approximate capacitance characteristics, at least in part by measuring a current density or a current, or a combination thereof, within the correlated electron material.

11. The method of claim 10 , wherein the particular impedance state depends at least in part on a combination of particular resistance characteristics and particular capacitance characteristics of the correlated electron material.

12. The method of claim 11 , wherein the plurality of particular impedance states comprise a first impedance state and a second impedance state, wherein the first impedance state comprises an impedance lower than an impedance for the second impedance state.

13. The method of claim 12 , wherein the first impedance state comprises a lower resistance and a lower capacitance for the correlated electron material, and wherein the second impedance state comprises a higher resistance and a higher capacitance for the correlated electron material.

14. The method of claim 13 , wherein a ratio of impedances for the first and second impedance states is proportional to a physical property of the correlated electron material.

15. The method of claim 14 , wherein the physical property of the correlated electron material is a Thomas Fermi screening length or a Bohr radius, or a combination thereof.

16. The method of claim 10 , wherein the first impedance state represents a first value, symbol, parameter, or condition, or a combination thereof, and the second impedance state represents a second value, symbol, parameter, or condition, or a combination thereof, and wherein a difference in current between the first impedance state and the second impedance state at a determined voltage indicates a read window.

17. An apparatus, comprising:

a variable impeder device comprising a correlated electron material capable of operating in a first impedance state and a second impedance state, wherein the first impedance state comprises a particular first approximate resistance and a particular first approximate capacitance and wherein the second impedance state comprises a particular second approximate resistance and a particular second approximate capacitance.

18. The apparatus of claim 17 , wherein the particular first approximate resistance and the particular first approximate capacitance of the first impedance state comprises a lower resistance, lower capacitance state, and wherein the particular second approximate resistance and the particular second approximate capacitance of the second impedance state comprises a higher resistance, higher capacitance state.

19. The apparatus of claim 18 , wherein a change in capacitance of the variable impeder between the first impedance state and the second impedance state to depend at least in part on one or more material properties of the correlated electron material.

20. The apparatus of claim 18 , wherein a transition from the first impedance state to the second impedance state of the variable impeder device to depend at least in part on an applied critical bias and a critical current/current density.

21. The apparatus of claim 18 , further comprising one or more current and/or voltage sources, wherein to transition from the first impedance state to the second impedance state, the one or more current and/or voltage sources to provide the correlated electron material with a plurality of holes such that a concentration of holes within the correlated electron material exceeds a threshold.

22. The apparatus of claim 21 , wherein to transition from the first impedance state to the second impedance state, at least one of the plurality of holes to recombine with a respective at least one of a plurality of electrons within the correlated electron material.

23. The apparatus of claim 22 , wherein to transition from the second impedance state to the first impedance state of the variable impeder device, the one or more current and/or voltage sources to provide the correlated electron material with a plurality of electrons such that a current and/or current density within the correlated electron material exceeds a first threshold and/or a voltage across the correlated electron material exceeds a second threshold.

24. The apparatus of claim 17 , wherein the correlated electron material comprises one or more of: one or more transition metal oxides, one or more rare earth oxides, one or more oxides of one or more f-block elements of the periodic table, one or more rare earth transitional metal oxide perovskites, yttrium, and/or ytterbium.

25. The apparatus of claim 17 , wherein the variable impeder device to comprise a memory cell.

26. The apparatus of claim 17 , wherein the variable impeder device to comprise at least a portion of a logic device.

27. The apparatus of claim 17 , wherein the variable impeder device to comprise at least a portion of a filter circuit, wherein the first and second particular approximate capacitances of the respective first and second impedance states to provide particular first and second signal frequency response characteristics for the filter circuit.