Polycrystalline diamond compacts having leach depths selected to control physical properties and methods of forming such compacts
View Patent ↗A method of forming a polycrystalline diamond compact includes forming a polycrystalline diamond material at a temperature and a pressure sufficient to form diamond-to-diamond bonds in the presence of a catalyst; substantially removing the catalyst from a volume of the polycrystalline diamond material from a first surface to a first leach depth; and substantially removing the catalyst from a volume of the polycrystalline diamond material from a second surface to a second, different leach depth. A polycrystalline diamond compact includes a polycrystalline diamond material having a first volume, a second volume, and a boundary between the first volume and the second volume. The first volume includes a catalyst disposed in interstitial spaces between diamond grains. The second volume is substantially free of the catalyst. The boundary's location is selected to control thermal stability and/or impact resistance.
1. A method of forming a polycrystalline diamond compact, the method comprising:
forming a polycrystalline diamond material from diamond particles at a temperature and a pressure sufficient to form diamond-to-diamond bonds in the presence of a catalyst;
selecting a leach depth from a first surface of the polycrystalline diamond material to control at least one of thermal stability and impact resistance;
substantially removing the catalyst from a volume of the polycrystalline diamond material from the first surface to the leach depth from the first surface to form a first leached region adjacent an unleached region, the unleached region comprising another volume of the polycrystalline diamond material retaining catalyst therein;
selecting a different leach depth from a second surface of the polycrystalline diamond material to control at least one of thermal stability and impact resistance; and
substantially removing the catalyst from a volume of the polycrystalline diamond material from the second surface to the different leach depth to form a second leached region adjacent the unleached region.
2. The method of claim 1 , wherein forming a polycrystalline diamond material comprises forming the polycrystalline diamond material on a supporting substrate.
3. The method of claim 1 , wherein forming a polycrystalline diamond material comprises forming the polycrystalline diamond material as a freestanding structure.
4. The method of claim 1 , wherein the first surface comprises a cutting face of the polycrystalline diamond material, and wherein the second surface comprises a side surface of the polycrystalline diamond material.
5. The method of claim 4 , wherein selecting a different leach depth from a second surface of the polycrystalline diamond material comprises selecting the different leach depth to be greater than the leach depth.
6. The method of claim 4 , wherein selecting the different leach depth from the second surface to be greater than the leach depth from the first surface comprises selecting the different leach depth to be at least 1.5 times the leach depth.
7. The method of claim 4 , wherein selecting a different leach depth from a second surface of the polycrystalline diamond material comprises selecting the different depth to be in a range from about 300 μm to about 600 μm.
8. The method of claim 4 , wherein selecting a leach depth from a first surface of the polycrystalline diamond material comprises selecting the depth to be in a range from about 100 μm to about 300 μm.
9. The method of claim 1 , wherein substantially removing the catalyst from a volume of the polycrystalline diamond material from the second surface to the different leach depth comprises:
removing the catalyst through the second surface without substantially removing the catalyst through the first surface; and
removing the catalyst through the second surface and the first surface simultaneously.
10. The method of claim 9 , further comprising masking the first surface before removing the catalyst through the second surface without substantially removing the catalyst through the first surface.
11. The method of claim 1 , wherein substantially removing the catalyst from the volume of the polycrystalline diamond material comprises leaching the catalyst.
12. The method of claim 1 , further comprising providing a backfill material into the volume of the polycrystalline diamond material.
13. The method of claim 12 , wherein the catalyst and the backfill material each comprise substantially the same material.
14. The method of claim 12 , wherein the backfill material exhibits a coefficient of thermal expansion lower than a coefficient of thermal expansion of the catalyst.
15. The method of claim 1 , wherein selecting a leach depth from a first surface of the polycrystalline diamond material and wherein selecting a different leach depth from a second surface of the polycrystalline diamond material comprises selecting the leach depth and the different leach depth to be in a range from about 100 μm to about 1000 μm.
16. The method of claim 1 , wherein substantially removing the catalyst from a volume of the polycrystalline diamond material from the first surface to the leach depth to form a first leached region adjacent an unleached region comprises forming a boundary between the first leached region and the unleached region that is substantially planar.
17. The method of claim 1 , wherein substantially removing the catalyst from a volume of the polycrystalline diamond material from the second surface to the different leach depth to form a second leached region adjacent the unleached region comprises forming a boundary between the second leached region and the unleached region that is substantially cylindrical.