Integrated control for silicon photonics

1. A system comprising a monolithically integrated system on chip device, the system comprising:

a single silicon substrate member;

a data input/output interface provided on the substrate member and configured for a predefined data rate and protocol;

an input/output block provided on the substrate member and coupled to the data input/output interface, the input/output block comprising a SerDes block, a CDR block, a compensation block, and an equalizer block;

a signal processing block provided on the substrate member and coupled to the input/output block, the signal processing block configured to the input/output block using a bi-direction bus in an intermediary protocol;

a driver module provided on the substrate member and coupled to the signal processing block, the driver module coupled to the signal processing block using a uni-directional multi-lane bus;

a driver interface provided on the substrate member and coupled to the driver module and configured to be coupled to a silicon photonics device, the driver interface being configured to transmit output data in either an amplitude modulation format or a combination of phase/amplitude modulation format or a phase modulation format;

a receiver module comprising a TIA block provided on the substrate member and to be coupled to the silicon photonics device using predefined modulation format, and configured to the signal processing block to communicate information to the input/output block for transmission through the data input/output interface;

a communication block provided on the substrate member and operably coupled to the input/output block, the signal processing block, the driver block, and the receiver block;

a communication interface coupled to the communication block;

a control block coupled to the communication block;

a control interface provided to communicate between the control block and the silicon photonics device, the control interface comprising: a modulator bias voltage input; a laser DC bias current input; a photocurrent or set output; a power monitor current/voltage output; a photodetector bias input; a heater current/voltage input; a photocurrent from input signal or set output; a wavelength monitor voltage/current/resistance output.

2. The system of claim 1 wherein the signal processing block comprises a FEC block, a digital signal processing block, a framing block, a protocol block, and a redundancy block; wherein the control block is provided on the substrate.

3. The system of claim 1 wherein the driver module is selected from a current drive or a voltage driver.

4. The system of claim 1 wherein the driver module is a differential driver.

5. The system of claim 1 wherein the amplified modulation format is selected from NRZ format or PAM format.

6. The system of claim 1 wherein the phase modulation format is selected from BPSK or nPSK.

7. The system of claim 1 wherein the signal processing block comprises a FEC block, a digital signal processing block, a framing block, a protocol block, and a redundancy block; wherein the amplified modulation format is a PAM format.

8. The system of claim 1 wherein the phase/amplitude modulation is QAM.

9. The system of claim 1 wherein the silicon photonic device is configured to convert the output data into an output transport data in a WDM signal.

10. The system of claim 1 wherein the control block is configured to initiate a laser bias or a modulator bias.

11. The system of claim 1 wherein the control block is configured for laser bias and power control of the silicon photonics device.

12. The system of claim 1 wherein the control block is configured with a thermal tuning or carrier tuning device each of which is configured on the silicon photonics device.

13. The system of claim 1 wherein the SerDes block is configured to convert a first data stream of N into a second data stream of M.

14. A system comprising monolithically integrated system on chip device, the device comprising:

a single silicon substrate member;

a data input/output interface provided on the substrate member and configured for a predefined data rate and protocol;

an input/output block provided on the substrate member and coupled to the data input/output interface;

a signal processing block provided on the substrate member and coupled to the input/output block, the signal processing block configured to the input/output block using a bi-direction bus in an intermediary protocol;

a driver module provided on the substrate member and coupled to the signal processing block, the driver module coupled to the signal processing block using a uni-directional multi-lane bus;

a driver interface provided on the substrate member and coupled to the driver module and configured to be coupled to a silicon photonics device, the driver interface being configured to transmit output data in either an amplitude modulation format or a combination of phase/amplitude modulation format or a phase modulation format;

a receiver module comprising a TIA block provided on the substrate member and to be coupled to the silicon photonics device using predefined modulation format, and configured to the signal processing block to communicate information to the input/output block for transmission through the data input/output interface;

a communication block provided on the substrate member and operably coupled to the input/output block, the signal processing block, the driver block, and the receiver block;

a communication interface coupled to the communication block;

a control block coupled to the communication block;

a control interface provided to communicate between the control block and the silicon photonics device, the control interface comprising: a modulator bias voltage input; a laser DC bias current input; a photocurrent or set output; a power monitor current/voltage output; a photodetector bias input; a heater current/voltage input; a photocurrent from input signal or set output; a wavelength monitor voltage/current/resistance output.

15. The system of claim 14 wherein the signal processing block comprises a FEC block, a digital signal processing block, a framing block, a protocol block, and a redundancy block; and the input/output block comprising a SerDes block, a CDR block, a compensation block, and an equalizer block; wherein the interface is configured on the silicon photonics device; wherein the control block being provided on the substrate.

16. The system of claim 15 wherein the driver module is selected from a current drive or a voltage driver.

17. The system of claim 15 wherein the driver module is a differential driver.

18. The system of claim 15 wherein the amplified modulation format is selected from NRZ format or PAM format.

19. The system of claim 15 wherein the phase modulation format is selected from BPSK or nPSK.

20. The system of claim 15 wherein the signal processing block comprises a FEC block, a digital signal processing block, a framing block, a protocol block, and a redundancy block; wherein the amplified modulation format is a PAM format.

21. The system of claim 15 wherein the phase/amplitude modulation is QAM.

22. The system of claim 15 wherein the silicon photonic device is configured to convert the output data into an output transport data in a WDM signal.

23. The system of claim 15 wherein the control block is configured to initiate a laser bias or a modulator bias.

24. The system of claim 15 wherein the control block is configured for laser bias and power control of the silicon photonics device.

25. The system of claim 15 wherein the control block is configured with a thermal tuning or carrier tuning device each of which is configured on the silicon photonics device.

26. The system of claim 15 wherein the SerDes block is configured to convert a first data stream of N into a second data stream of M.