Timing device and method thereof

1. A timing device, comprising:

a memory device, having a first electrical parameter; and

a processor is configured to:

sense an initial value of the first electrical parameter of the memory device;

sense a first value of the first electrical parameter of the memory device after a first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the memory device and the first value of the first electrical parameter of the memory device.

2. The timing device according to claim 1 , wherein the processor is further configured to reset the first electrical parameter of the memory device to the initial value.

3. The timing device according to claim 1 , wherein the processor is further configured to:

determine whether the first value of the first electrical parameter of the memory device is larger than a first threshold; and

reset the first electrical parameter of the memory device to the initial value when the first value of the first electrical parameter of the memory device is larger than the first threshold.

4. The timing device according to claim 1 , wherein the processor is further configured to:

sense an initial value of a second electrical parameter of the memory device;

sense a first value of the second electrical parameter of the memory device after the first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the second electrical parameter of the memory device, and the first value of the second electrical parameter of the memory device.

5. The timing device according to claim 1 , further comprising:

a second memory device, having the first electrical parameter;

wherein the processor is further configured to:

sense an initial value of the first electrical parameter of the second memory device;

sense a first value of the first electrical parameter of the second memory device after the first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the first electrical parameter of the second memory device, and the first value of the first electrical parameter of the second memory device.

6. The timing device according to claim 1 , further comprising:

a second memory device, having a second electrical parameter;

wherein the processor is further configured to:

sense an initial value of the second electrical parameter of the second memory device;

sense a first value of the second electrical parameter of the second memory device after the first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the second electrical parameter of the second memory device, and the first value of the second electrical parameter of the second memory device.

7. The timing device according to claim 1 , further comprising:

a second memory device, having the first electrical parameter;

wherein the processor is further configured to:

sense an initial value of the first electrical parameter of the second memory device;

determine whether the first value of the first electrical parameter of the memory device is larger than a first threshold; and

when the first value of the first electrical parameter of the memory device is larger than the first threshold:

sense a first value of the first electrical parameter of the second memory device after the first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the second memory device and the first value of the first electrical parameter of the second memory device.

8. The timing device according to claim 7 , further comprising:

a third memory device, having the first electrical parameter;

wherein the processor is further configured to:

sense an initial value of the first electrical parameter of the third memory device;

determine whether the first value of the first electrical parameter of the second memory device is larger than a second threshold; and

when the first value of the first electrical parameter of the second memory device is larger than the second threshold:

sense a first value of the first electrical parameter of the third memory device after the first time period; and

calculate the first time period according to the initial value of the first electrical parameter of the third memory device and the first value of the first electrical parameter of the third memory device.

9. The timing device according to claim 1 , wherein the memory device comprises a phase change memory device, an oxide resistance change device, a conductive bridge device, a floating-gate device and a charge trapping device.

10. The timing device according to claim 1 , wherein the first electrical parameter is a resistance, a threshold voltage, a capacitance, an inductance, or a number of charges in a capacitor.

11. A timing method using a memory device, comprising:

sensing an initial value of a first electrical parameter of the memory device;

sensing a first value of the first electrical parameter of the memory device after a first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the memory device and the first value of the first electrical parameter of the memory device.

12. The timing method according to claim 11 , further comprising:

resetting the first electrical parameter of the memory device to the initial value.

13. The timing method according to claim 11 , further comprising:

determining whether the first value of the first electrical parameter of the memory device is larger than a first threshold; and

resetting the first electrical parameter of the memory device to the initial value when the first value of the first electrical parameter of the memory device is larger than the first threshold.

14. The timing method according to claim 11 , further comprising:

sensing an initial value of a second electrical parameter of the memory device;

sensing a first value of the second electrical parameter of the memory device after the first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the second electrical parameter of the memory device, and the first value of the second electrical parameter of the memory device.

15. The timing method according to claim 11 , further comprising:

sensing an initial value of the first electrical parameter of a second memory device;

sensing a first value of the first electrical parameter of the second memory device after the first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the first electrical parameter of the second memory device, and the first value of the first electrical parameter of the second memory device.

16. The timing method according to claim 11 , further comprising:

sensing an initial value of a second electrical parameter of a second memory device;

sensing a first value of the second electrical parameter of the second memory device after the first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the memory device, the first value of the first electrical parameter of the memory device, the initial value of the second electrical parameter of the second memory device, and the first value of the second electrical parameter of the second memory device.

17. The timing method according to claim 11 , further comprising:

sensing an initial value of the first electrical parameter of a second memory device;

determining whether the first value of the first electrical parameter of the memory device is larger than a first threshold; and

when the first value of the first electrical parameter of the memory device is larger than the first threshold:

sensing a first value of the first electrical parameter of the second memory device after the first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the second memory device and the first value of the first electrical parameter of the second memory device.

18. The timing method according to claim 17 , further comprising:

sensing an initial value of the first electrical parameter of a third memory device;

determining whether the first value of the first electrical parameter of the second memory device is larger than a second threshold; and

when the first value of the first electrical parameter of the second memory device is larger than the second threshold:

sensing a first value of the first electrical parameter of the third memory device after the first time period; and

calculating the first time period according to the initial value of the first electrical parameter of the third memory device and the first value of the first electrical parameter of the third memory device.

19. The timing method according to claim 11 , wherein the memory device comprises a phase change memory device, an oxide resistance change device, a conductive bridge device, a floating-gate device and a charge trapping device.

20. The timing method according to claim 11 , wherein the first electrical parameter is a resistance, a threshold voltage, a capacitance, an inductance, or a number of charges in a capacitor.