Use of titanium nitride as an electrode in non-faradaic electrochemical cell
A nanopore cell includes a conductive layer. The nanopore cell further includes a titanium nitride (TiN) working electrode disposed above the conductive layer. The nanopore cell further includes insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained. In some embodiments, the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit sparsely-spaced TiN columnar structures or columns of TiN crystals above the conductive layer.
1. A nanopore cell, comprising:
a conductive layer;
a titanium nitride (TiN) working electrode disposed above the conductive layer; and
insulating walls disposed above the TiN working electrode, wherein the insulating walls and the TiN working electrode form a well into which an electrolyte may be contained, wherein the TiN working electrode forms a base of the well and wherein the insulating walls form surrounding walls of the well, and wherein the surrounding walls extending from the base of the well, wherein a portion of the insulating walls covers a portion of the TiN working electrode, and wherein the well has an opening above an uncovered portion of the TiN working electrode, and wherein a base surface area of the TiN working electrode is greater than a base surface area of the opening above the uncovered portion of the TiN working electrode, and wherein a membrane with a nanopore is formed above the opening of the well.
2. The nanopore cell of claim 1 , wherein the TiN working electrode comprises a spongy and porous TiN working electrode that is deposited by a deposition technique with conditions tuned to deposit TiN columnar structures or columns of TiN crystals above the conductive layer.
3. The nanopore cell of claim 2 , wherein the spongy and porous TiN working electrode has a specific surface area that is ten to a thousand times that of a specific surface area of a flat TiN working electrode with substantially identical dimensions.
4. The nanopore cell of claim 2 , wherein the spongy and porous TiN working electrode has an electrochemical capacitance that is ten to a thousand times that of an electrochemical capacitance of a flat TiN working electrode with substantially identical dimensions.
5. The nanopore cell of claim 2 , wherein the spongy and porous TiN working electrode has an electrochemical capacitance between 10 picofarads and 1 nanofarads.
6. The nanopore cell of claim 2 , wherein the deposition technique comprises direct current (DC) reactive sputtering from a titanium target, and the conditions tuned to deposit TiN columnar structures or columns of TiN crystals above the conductive layer comprise a temperature, substrate bias voltage, and pressure for sputtering.
7. The nanopore cell of claim 1 , wherein the base surface area of the TiN working electrode and the base surface area of the opening above the uncovered portion of the TiN working electrode are selected based on a ratio of a capacitance associated with the TiN working electrode and a capacitance associated with a membrane that spans across the opening.
8. The nanopore cell of claim 2 , wherein a portion of the insulating walls covers a portion of the TiN working electrode, and wherein the well has an opening above an uncovered portion of the TiN working electrode, and wherein the electrolyte can diffuse through spaces between the TiN columnar structures or columns of TiN crystals and diffuse vertically down the uncovered portion of the TiN working electrode and then horizontally to the covered portion of the TiN working electrode.