PROTECTION CIRCUIT FOR POWER AMPLIFIER
A radio frequency device includes a radio frequency (RF) power amplifier (PA) circuit including a driver stage configured to amplify an input signal to generate an output signal and a power stage configured to amplify the output signal, a first bias circuit configured to supply a first bias current to the driver stage, a second bias circuit configured to supply a second bias current to the power stage, and a protection circuit configured to limit a current flowing in the RF PA. The protection circuit is coupled between the first bias circuit and the second bias circuit.
1 . A radio frequency device, comprising:
a radio frequency (RF) power amplifier (PA) comprising a driver stage configured to amplify an input signal to generate an output signal and a power stage configured to amplify the output signal;
a first bias circuit configured to supply a first bias current to the driver stage;
a second bias circuit configured to supply a second bias current to the power stage; and
a protection circuit configured to limit a current flowing in the RF PA, the protection circuit being coupled between the first bias circuit and the second bias circuit.
2 . The radio frequency device of claim 1 , wherein the protection circuit comprises:
a detection circuit configured to detect the second bias current; and
a feedback circuit configured to limit the first bias current when the second bias current detected by the detection circuit is equal to or greater than a threshold current value.
3 . The radio frequency device of claim 2 , wherein the protection circuit further comprises an inverting circuit coupled between the detection circuit and the feedback circuit, the inverting circuit configured to invert an output of the detection circuit and supply the inverted output as an input to the feedback circuit.
4 . The radio frequency device of claim 3 , the first bias circuit comprising a first transistor, wherein an emitter current of the first transistor is supplied to the driver stage as the first bias current; and the second bias circuit comprising a second transistor, wherein an emitter current of the second transistor is supplied to the power stage as the second bias current.
5 . The radio frequency device of claim 4 , wherein the detection circuit comprises:
a third transistor configured to operate as a current mirror circuit of the second transistor; and
a first detection resistor configured to detect a voltage at a collector of the third transistor.
6 . The radio frequency device of claim 5 , wherein a base of the third transistor is coupled to a base of the second transistor and an emitter of the third transistor is coupled to an emitter of the second transistor, and
the first detection resistor is disposed between a power source and the collector of the third transistor.
7 . The radio frequency device of claim 6 , the inverting circuit comprising:
a fourth transistor; and
a second detection resistor configured to detect a voltage at a collector of the fourth transistor,
wherein a base of the fourth transistor is coupled to the collector of the third transistor, and the second detection resistor is disposed between the power source and the collector of the fourth transistor.
8 . The radio frequency device of claim 7 , the feedback circuit comprising:
a fifth transistor, wherein a base of the fifth transistor is coupled to the collector of the fourth transistor, and
a collector of the fifth transistor is coupled to a base of the first transistor.
9 . The radio frequency device of claim 7 , the feedback circuit comprising:
a fifth transistor, wherein a base of the fifth transistor is coupled to the collector of the fourth transistor, and a collector of the fifth transistor is coupled to an output of the driver stage.
10 . The radio frequency device of claim 8 , wherein the protection circuit further comprises a voltage level shifter configured to shift a voltage input to the feedback circuit.
11 . The radio frequency device of claim 10 , wherein the voltage level shifter comprises:
a first shift resistor disposed between the collector of the third transistor and the base of the fourth transistor; and
a sixth transistor and a second shift resistor, the shift register being disposed between the collector of the fourth transistor and the base of the fifth transistor, the sixth transistor and the second shift resistor being connected in series.
12 . The radio frequency device of claim 1 , wherein the protection circuit comprises:
a detection circuit configured to detect the first bias current; and
a feedback circuit configured to limit the second bias current when the first bias current detected by the detection circuit is equal to or greater than a threshold current value.
13 . The radio frequency device of claim 12 , wherein the protection circuit further comprises an inverting circuit coupled between the detection circuit and the feedback circuit, the inverting circuit being configured to invert an output of the detection circuit and supply the inverted output as an input to the feedback circuit.
14 . A protection circuit for a radio frequency power amplifier, the radio frequency power amplifier comprising: a driver stage configured to amplify an input signal to generate an output signal; a power stage configured to amplify the output signal of the driver stage; a first bias circuit configured to supply a first bias current to the driver stage; and a second bias circuit configured to supply a second bias current to the power stage, the protection circuit comprising:
a detection circuit configured to detect one of the first bias current and the second bias current; and
a feedback circuit which is activated when the current detected by the detection circuit is equal to or greater than a threshold current value, wherein the protection circuit is coupled between the first bias circuit and the second bias circuit.
15 . The protection circuit of claim 14 , wherein when the current detected by the detection circuit from one of the first bias current circuit or the second bias current circuit is equal to or greater than the threshold current value, the feedback circuit limits the other one of the first bias current or the second bias current.
16 . The protection circuit of claim 14 , further comprising an inverting circuit coupled between the detection circuit and the feedback circuit, the inverting circuit configured to invert an output of the detection circuit and supply the inverted output as an input to the feedback circuit.
17 . A bias device for a radio frequency (RF) power amplifier (PA), the RF PA including a driver stage configured to amplify an input signal to generate an output signal and a power stage configured to amplify the output signal of the driver stage, the bias device comprising:
a first bias circuit configured to supply a first bias current to the driver stage;
a second bias circuit configured to supply a second bias current to the power stage; and
a protection circuit configured to limit a current flowing in the RF PA, wherein the protection circuit is coupled between the first bias circuit and the second bias circuit.
18 . The bias device of claim 17 , wherein the protection circuit comprises:
a detection circuit configured to detect the second bias current; and
a feedback circuit configured to limit the first bias current when the second bias current detected by the detection circuit is equal to or greater than a threshold current value.
19 . The bias device of claim 17 , wherein the protection circuit comprises:
a detection circuit configured to detect the first bias current; and
a feedback circuit configured to limit the second bias current when the first bias current detected by the detection circuit is equal to or greater than a threshold current value.
20 . The bias device of claim 18 , wherein when the current detected by the detection circuit from one of the first bias current circuit or the second bias current circuit is equal to or greater than the threshold current value, the feedback circuit limits the other one of the first bias current or the second bias current.