AMORPHOUS SILICON BASED LASER DOPED SOLAR CELLS
A passivated surface and base and emitter regions in a silicon substrate are formed. Intrinsic amorphous silicon is formed on first surface of a silicon substrate. A first dopant is formed on the intrinsic amorphous silicon. A first laser beam is applied through the first dopant and forms a first doped region in the silicon substrate. A second dopant is formed on the intrinsic amorphous silicon. A second laser beam is applied through the second dopant and forms a second doped region in the silicon substrate.
1 . A method for making a passivated surface and base and emitter regions in a silicon substrate, comprising:
forming intrinsic amorphous silicon on a first surface of a silicon substrate;
forming a first dopant on said intrinsic amorphous silicon;
applying first laser beam through said first dopant and forming at least a first doped region in said silicon substrate having the polarity of said first dopant;
forming a second dopant on said intrinsic amorphous silicon; and
applying second laser beam through said second dopant and forming at least a second doped region in said silicon substrate having the polarity of said second dopant.
2 . The method of claim 1 , wherein said intrinsic amorphous silicon has a thickness greater than 10 nm.
3 . The method of claim 1 , wherein said intrinsic amorphous silicon is amorphous SiCx.
4 . The method of claim 1 , wherein said intrinsic amorphous silicon is amorphous SiOx.
5 . The method of claim 1 , wherein said intrinsic amorphous silicon is amorphous SiNx.
6 . The method of claim 1 , wherein said first dopant is a doped amorphous silicon.
7 . The method of claim 1 , wherein said first dopant is a spin on dopant.
8 . The method of claim 1 , wherein said first dopant is a patterned printed dopant.
9 . The method of claim 1 , wherein said first laser beam has a green wavelength.
10 . A method for making a passivated surface and base and emitter regions in a silicon substrate, comprising:
forming intrinsic amorphous silicon on a first surface of a silicon substrate, said intrinsic amorphous silicon having a thickness greater than 10 nm;
forming doped amorphous silicon on a first surface of a silicon substrate, said doped amorphous silicon having a thickness greater than 10 nm;
opening windows to said intrinsic amorphous silicon in a doping pattern;
forming a dopant on said intrinsic amorphous silicon; and
applying laser beam through said dopant and said doped amorphous silicon and forming at least a first doped region in said silicon substrate having the polarity of said dopant and at least a second doped region in said silicon substrate having the polarity of said doped amorphous silicon.
11 . The method of claim 9 , wherein after said laser beam is applied through said dopant and forming at least a first doped region in said silicon substrate having the polarity of said dopant said first dopant is removed and a laser beam is applied through said doped amorphous silicon and forming at least a second doped region in said silicon substrate having the polarity of said doped amorphous silicon.