Photomask, and method for creating pattern data thereof, and pattern forming method and processing method using photomask

1. A photomask comprising:

a translucent substrate;

a light blocking member provided on the translucent substrate for blocking exposure light;

a main pattern portion provided in a first region of the light blocking member corresponding to a desired pattern, the main pattern portion being an opening of the light blocking member; and

an auxiliary pattern portion provided in a second region of the light blocking member surrounding a position corresponding to the desired pattern and along a side constituting an outline portion of the desired pattern, the auxiliary pattern portion including a plurality of in-phase auxiliary patterns, each of the plurality of in-phase auxiliary patterns being an opening of the light blocking member transmitting in-phase light in which a phase is matched with a phase of light transmitted through the main pattern portion, wherein:

each of the plurality of in-phase auxiliary patterns is provided at a distance of √(2×n×G×λ) from the side constituting the outline portion of the desired pattern, and

the exposure light transmitted through the auxiliary pattern portion is projected on an exposed body to form a projection image having light intensity emphasized at the side constituting the outline portion of the desired pattern (where G is a gap length between the photomask and the exposed body, λ is a wavelength of the exposure light, and n is a natural number).

2. The photomask according to claim 1 , wherein:

the desired pattern includes a convex portion constructed with the side constituting the outline portion of the desired pattern, and

each of the plurality of in-phase auxiliary patterns has a decreased size in width near the convex portion or has an end of the in-phase auxiliary pattern terminated near the convex portion.

3. The photomask according to claim 1 , wherein:

the plurality of in-phase auxiliary patterns include a first in-phase auxiliary pattern provided adjacent to the main pattern portion with a light blocking part of the light blocking member interposed therebetween, and

the first in-phase auxiliary pattern is provided at a distance within √(2×G×λ) from the main pattern portion.

4. The photomask according to claim 3 , wherein the first in-phase auxiliary pattern has a width larger than a wavelength of the exposure light.

5. The photomask according to claim 3 , wherein the main pattern portion is a region having a size enlarged at least (√(2×G×λ)/8 from the desired pattern.

6. The photomask according to claim 3 , wherein a width of the light blocking part between the main pattern portion and the first in-phase auxiliary pattern is larger than a wavelength of the exposure light.

7. The photomask according to claim 3 , wherein:

the auxiliary pattern portion further includes a second in-phase auxiliary pattern provided adjacent to the main pattern portion with the first in-phase auxiliary pattern interposed therebetween, and

the second in-phase auxiliary pattern is provided at a distance within √(4×G×2) from the main pattern portion.

8. The photomask according to claim 7 , wherein a light blocking part of the light blocking member is provided between the first in-phase auxiliary pattern and the second in-phase auxiliary pattern.

9. The photomask according to claim 7 , wherein the second in-phase auxiliary pattern has a width smaller than a width of the first in-phase auxiliary pattern.

10. The photomask according to claim 3 , wherein a different-phase auxiliary pattern is provided between the main pattern portion and the first in-phase auxiliary pattern, the different-phase auxiliary pattern being constructed with a phase shifter that transmits the exposure light with a phase different from a phase of the exposure light transmitted through the main pattern portion.

11. The photomask according to claim 1 , wherein a different-phase auxiliary pattern is provided between the in-phase auxiliary patterns adjacent to each other, the different-phase auxiliary pattern transmitting the exposure light with a phase different from a phase of the exposure light transmitted through the main pattern.

12. The photomask according to claim 10 , wherein the different-phase auxiliary pattern transmits the exposure light with a phase opposite to a phase of the exposure light transmitted through the main pattern.

13. The photomask according to claim 12 , wherein a phase difference between the different-phase auxiliary pattern and the main pattern falls within 180°±45°.

14. The photomask according to claim 12 , wherein the different-phase auxiliary pattern has a width larger than a wavelength of the exposure light.

15. The photomask according to claim 12 , wherein a light blocking part of the light blocking member is provided between the in-phase auxiliary pattern and the different-phase auxiliary pattern.

16. The photomask according to claim 15 , wherein the light blocking part has a width larger than a wavelength of the exposure light.

17. The photomask according to claim 1 , wherein:

the desired pattern includes a convex portion constructed with the side constituting the outline portion of the desired pattern, and the in-phase auxiliary patterns provided in parallel to the side are decreased in number near the convex portion.

18. The photomask according to claim 1 , wherein:

the desired pattern includes a thin line portion in which a line width is less than or equal to √(λ×G), and

the plurality of in-phase auxiliary patterns are provided along a side constituting the thin line portion.

19. The photomask according to claim 18 , wherein:

the desired pattern further includes a thick line portion that is coupled to the thin line portion, the line width of the thick line portion being greater than or equal to √(λ×G), and

the plurality of in-phase auxiliary patterns are provided along a side constituting the thick line portion.