Light emitting device
View Patent ↗A light-emitting diode comprises a substrate; a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer; a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and a first pad on the second region; wherein the first region is rougher than the second region, wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer in the first region is higher than that of the impurity of the first oxide layer in the second region.
1. A light-emitting diode, comprising:
a substrate;
a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer;
a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and
a first pad on the second region;
wherein the first region is rougher than the second region,
wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer under the first region is higher than that of the impurity of the first oxide layer under the second region, and
wherein the first oxide layer under the second region is thicker than the first oxide layer under the first region.
2. A light-emitting diode according to claim 1 , wherein the first oxide layer under the second region is devoid of the impurity.
3. A light-emitting diode according to claim 1 , further comprising a second oxide layer covering the first region of the top surface.
4. A light-emitting diode according to claim 3 , wherein the second oxide layer is devoid of the impurity.
5. A light-emitting diode according to claim 3 , wherein the second oxide layer has a second top surface and the first region of the top surface is rougher than the second top surface.
6. A light-emitting diode according to claim 3 , wherein the first oxide layer and the second oxide layer comprise the same material.
7. A light-emitting diode according to claim 3 , wherein the first oxide layer and the second oxide layer comprise different material.
8. A light-emitting diode according to claim 3 , wherein the first oxide layer comprises an upper portion contacting the second oxide layer and a lower portion between the upper portion and the semiconductor stack, wherein a concentration of the impurity in the upper portion is higher than that of the impurity in the lower portion.
9. A light-emitting diode according to claim 1 , wherein a portion of the first oxide layer exposes the semiconductor stack.
10. A light-emitting diode according to claim 1 , wherein the impurity comprises Al or Ag.
11. A light-emitting diode according to claim 1 , wherein a transparency of the first oxide layer under the first region is lower than a transparency of the first oxide layer under the second region.
12. A light-emitting diode according to claim 1 , wherein a pattern of the first region comprises mesh or dot matrix.
13. A light-emitting diode according to claim 1 , further comprising a second pad on the substrate opposite to the semiconductor stack.
14. A light-emitting diode according to claim 1 , wherein a portion of the second region is not covered by the first pad.
15. A light-emitting diode according to claim 8 , wherein a transparency of the upper portion is lower than a transparency of the other portion of the first oxide layer.
16. A light-emitting diode, comprising:
a substrate;
a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer;
a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and
a first pad on the second region;
wherein the first region is rougher than the second region, and
wherein the first oxide layer comprises an upper portion and a lower portion between the upper portion and the semiconductor stack, and a concentration of the impurity in the upper portion is higher than that of the impurity in the lower portion.