Delayed diffusion of novel species from the back side of carbide
View Patent ↗A polycrystalline diamond compact (PDC) is fabricated using a process of delayed diffusion (i.e., post-sintering) of a diffusion species (i.e., a metalloid) introduced from the back side of a carbide further away from the diamond grit or from the flank side of the carbide, as opposed to the side of the carbide adjacent to the diamond grit. The process of fabricating the PDC includes depositing, in a metal container, a synthetic diamond grit, a carbide, and a diffusion species, then applying a high pressure and high temperature (HPHT) to the contents of the metal container wherein (1) the carbide diffuses across the diamond grit, and (2) the diffusion species diffuses across the carbide followed by the diamond grit, thus providing a protective coating to the PDC.
1. A polycrystalline diamond compact, comprising:
a substrate having a binder content; and
a polycrystalline diamond layer bonded to the substrate, wherein the binder content of the substrate is infiltrated into the polycrystalline diamond layer and is encircled by a diffusion species, wherein the diffusion species is made of a different material than is the binder content of the substrate.
2. The polycrystalline diamond compact of claim 1 , wherein the binder content of the substrate comprises cobalt.
3. The polycrystalline diamond compact of claim 1 , wherein the diffusion species includes at least one of silicon (Si) or cobalt silicide (CoSi), Cr, Ti, V, Zr, Mo, W, Nb, Sc, Y, Ta, B, and Ru.
4. The polycrystalline diamond compact of claim 1 , wherein the diffusion species causes the polycrystalline diamond layer to have a lower coefficient of thermal expansion in the pore spaces between diamond grains.
5. A polycrystalline diamond compact, comprising:
a cemented carbide binder;
a substrate having a binder content; and
a polycrystalline diamond layer bonded to the substrate, the polycrystalline diamond layer comprising a plurality of diamond grains sintered to one another and separated by a plurality of pore spaces, wherein the plurality of the pore spaces includes binder content that is at least partially surrounded by a diffusion species that diffuses across the cemented carbide binder and that is made from a different material than is the binder content of the substrate.
6. The polycrystalline diamond compact of claim 5 , wherein the diffusion species spaces the binder content away from at least portions of a diamond grain.
7. The polycrystalline diamond compact of claim 5 , wherein the binder content of the substrate comprises cobalt.
8. The polycrystalline diamond compact of claim 5 , wherein the diffusion species includes at least one of silicon (Si) or cobalt silicide (CoSi), Cr, Ti, V, Zr, Mo, W, Nb, Sc, Y, Ta, B, and Ru.
9. The polycrystalline diamond compact of claim 5 , wherein the diffusion species includes silicon, silicon carbide, or combinations of the same.
10. The polycrystalline diamond of claim 5 , wherein the diffusion species has a lower coefficient of thermal expansion than the binder content.
11. A polycrystalline diamond compact, comprising:
a diamond powder grit deposited into a metal container;
a cemented carbide substrate layer located adjacent to the diamond powder grit;
a diffusion species introduced to protect the polycrystalline diamond compact from graphitization wherein the diffusion species is located on the side of the cemented carbide substrate opposite a top side of the cemented carbide substrate located adjacent to the diamond powder grit such that the cemented carbide is sandwiched between the diamond grit and the diffusion species.
12. The polycrystalline diamond compact of claim 11 , wherein the diffusion species spaces the binder content away from at least portions of a diamond grain.
13. The polycrystalline diamond compact of claim 11 , wherein the binder content of the substrate comprises cobalt.
14. The polycrystalline diamond compact of claim 11 , wherein the diffusion species includes at least one of silicon (Si) or cobalt silicide (CoSi), Cr, Ti.
15. The polycrystalline diamond compact of claim 11 , wherein the diffusion species includes at least one of silicon (Si) or cobalt silicide (CoSi), Cr, Ti, V, Zr, Mo, W, Nb, Sc, Y, Ta, B, and Ru.
16. The polycrystalline diamond compact of claim 11 , wherein the diffusion species causes the polycrystalline diamond layer to have a lower coefficient of thermal expansion in the pore spaces between diamond grains.