Semiconductor device
According to one embodiment, the semiconductor body of the first portion includes a first semiconductor part and a second semiconductor part. The first semiconductor part extends in the stacking direction. The second semiconductor part is provided between the first semiconductor part and the first electrode layer, and has an end located closer to the first electrode layer side than the first semiconductor part. The first insulating film of the second portion includes a first insulating part and a second insulating part. The first insulating part extends in the stacking direction. The second insulating part is provided between the first insulating part and the second electrode layer, and has an end located closer to the second electrode layer side than the first insulating part.
1. A semiconductor device comprising:
a stacked body including a plurality of electrode layers stacked with an insulator between the electrode layers; and
a columnar part including a semiconductor body, a charge storage film, a first insulating film, and a second insulating film, the semiconductor body extending in the stacked body in a stacking direction of the stacked body, the charge storage film provided between the semiconductor body and the electrode layers, the first insulating film provided between the semiconductor body and the charge storage film, the second insulating film provided between the charge storage film and the electrode layers,
the columnar part including a first portion having a first diameter, and a second portion having a second diameter smaller than the first diameter,
the electrode layers including a first electrode layer contiguous to the first portion, and a second electrode layer contiguous to the second portion and thinner than the first electrode layer,
the semiconductor body of the first portion including a first semiconductor part and a second semiconductor part, the first semiconductor part extending in the stacking direction, the second semiconductor part provided between the first semiconductor part and the first electrode layer, the second semiconductor part having an end located closer to the first electrode layer side than the first semiconductor part, and
the first insulating film of the second portion including a first insulating part and a second insulating part, the first insulating part extending in the stacking direction, the second insulating part provided between the first insulating part and the second electrode layer, the second insulating part having an end located closer to the second electrode layer side than the first insulating part.
2. The device according to claim 1 , wherein
the insulator is an insulating layer,
steps are formed between a side surface of the first electrode layer on the columnar part side and a side surface of the insulating layer on the columnar part side, and
the charge storage film and the first insulating film of the first portion of the columnar part are conformally provided along the steps.
3. The device according to claim 1 , wherein the second semiconductor part of the semiconductor body is provided in a ring shape around the first semiconductor part.
4. The device according to claim 1 , wherein
the insulator is an insulating layer,
steps are formed between a side surface of the second electrode layer on the columnar part side and a side surface of the insulating layer on the columnar part side, and
the charge storage film of the second portion of the columnar part is conformally provided along the steps.
5. The device according to claim 1 , wherein the second insulating part of the first insulating film is provided in a ring shape around the first insulating part.
6. The device according to claim 1 , wherein a thickness of a part in which the second insulating part of the first insulating film is provided in the second portion of the columnar part in a direction connecting the second electrode layer and the semiconductor body is larger than a thickness of the first insulating film in the first portion of the columnar part.
7. The device according to claim 1 , wherein
the first portion of the columnar part is provided at an upper side of a center part in the stacking direction, and
the second portion of the columnar part is provided at a lower side of the center part in the stacking direction.
8. The device according to claim 1 , wherein a side surface of the semiconductor body on the first insulating film side of the second portion of the columnar part extends along the stacking direction.
9. The device according to claim 1 , wherein the second insulating film is also provided between the first electrode layer and the insulator, and between the second electrode layer and the insulator.
10. A semiconductor device comprising:
a stacked body including a plurality of electrode layers stacked with an insulator between the electrode layers; and
a columnar part including a semiconductor body, a charge storage film, a first insulating film, and a second insulating film, the semiconductor body extending in the stacked body in a stacking direction of the stacked body, the charge storage film provided between the semiconductor body and the electrode layers, the first insulating film provided between the semiconductor body and the charge storage film, the second insulating film provided between the charge storage film and the electrode layers,
the columnar part including a first portion having a first diameter, and a second portion having a second diameter smaller than the first diameter,
the electrode layers including a first electrode layer contiguous to the first portion, and a second electrode layer contiguous to the second portion,
a distance between the second electrode layer and the semiconductor body being larger than a distance between the first electrode layer and the semiconductor body, and
the first insulating film of the second portion including a first insulating part and a second insulating part, the first insulating part extending in the stacking direction, the second insulating part provided between the first insulating part and the second electrode layer, the second insulating part having an end located closer to the second electrode layer side than the first insulating part.
11. The device according to claim 10 , wherein
the insulator is an insulating layer,
steps are formed between a side surface of the second electrode layer on the columnar part side and a side surface of the insulating layer on the columnar part side, and
the charge storage film of the second portion of the columnar part is conformally provided along the steps.
12. The device according to claim 10 , wherein the second insulating part of the first insulating film is provided in a ring shape around the first insulating part.
13. The device according to claim 10 , wherein a thickness of a part in which the second insulating part of the first insulating film is provided in the second portion of the columnar part in a direction connecting the second electrode layer and the semiconductor body is larger than a thickness of the first insulating film in the first portion of the columnar part.
14. The device according to claim 10 , wherein
the first portion of the columnar part is provided at an upper side of a center part in the stacking direction, and
the second portion of the columnar part is provided at a lower side of the center part in the stacking direction.
15. The device according to claim 10 , wherein a thickness of the first electrode layer and a thickness of the second electrode layer are nearly equal.
16. A semiconductor device comprising:
a stacked body including a plurality of electrode layers stacked with an insulator between the electrode layers; and
a columnar part including a semiconductor body, a charge storage film, a first insulating film, and a second insulating film, the semiconductor body extending in the stacked body in a stacking direction of the stacked body, the charge storage film provided between the semiconductor body and the electrode layers, the first insulating film provided between the semiconductor body and the charge storage film, the second insulating film provided between the charge storage film and the electrode layers,
the columnar part including a first portion having a first diameter, and a second portion having a second diameter smaller than the first diameter,
the electrode layers including a first electrode layer contiguous to the first portion, and a second electrode layer contiguous to the second portion,
the semiconductor body of the second portion having a side surface located at the first insulating film side, the side surface extending in the stacking direction, and
the semiconductor body of the first portion including a first semiconductor part and a second semiconductor part, the first semiconductor part extending in the stacking direction, the second semiconductor part provided between the first semiconductor part and the first electrode layer, the second semiconductor part having an end located closer to the first electrode layer side than the first semiconductor part.
17. The device according to claim 16 , wherein
the insulator is an insulating layer,
steps are formed between a side surface of the first electrode layer on the columnar part side and a side surface of the insulating layer on the columnar part side, and
the charge storage film and the first insulating film of the first portion of the columnar part are conformally provided along the steps.
18. The device according to claim 16 , wherein the second semiconductor part of the semiconductor body is provided in a ring shape around the first semiconductor part.
19. The device according to claim 16 , wherein
the first portion of the columnar part is provided at an upper side of a center part in the stacking direction, and
the second portion of the columnar part is provided at a lower side of the center part in the stacking direction.
20. The device according to claim 16 , wherein a thickness of the first electrode layer and a thickness of the second electrode layer are nearly equal.