Granted Patent B2

US 9,705,288 · App. 14/828,207 · Granted Jul 11, 2017

Abstract

Claims (42)

1. A vertical external cavity surface emitting laser (VECSEL) structure, comprising:

a first reflector;

a second reflector;

a heterostructure comprising an active region that includes one or more quantum well structures comprising AlGaInN configured to emit radiation at a wavelength, λ lase , having a range from about 200 to about 400 nm, in response to pumping by an electron beam, the active region disposed between the first reflector and the second reflector and spaced apart from the first reflector by an external cavity;

an electron beam source configured to generate the electron beam which is directed toward the active region; and

one or more electrical contacts, each of the contacts having the same electrical potential and electrically coupled to the heterostructure and configured to provide a current path that discharges electrons arising from the electron beam pumping of the heterostructure.

2. The structure of claim 1 , further comprising a vacuum chamber, wherein the second reflector, the heterostructure, the at least one electrical contact are disposed within the vacuum chamber and the first reflector is disposed outside the vacuum chamber.

3. The structure of claim 1 , wherein the heterostructure comprises a M-N semiconductor having one or more layers with n- or p-type doping in a range between about 10 17 /cm′ to about 10 20 /cm 3 and the n-type doping includes one or more of Si, Ge, and Sn and the p-type doping includes one or more of Mg, Be, Zn, Cd, and C.

4. The structure of claim 1 , wherein the electron beam source is configured to produce a stationary electron beam.

5. The structure of claim 1 , wherein the electron beam has at least one of:

a cross sectional diameter of about 10 μm to about 500 μm; and

a power density of the electron beam is greater than about 20 kW/cm 2 .

6. The structure of claim 1 , further comprising an optical element disposed within the optical cavity.

7. The structure of claim 1 , wherein each of the quantum well structures are located substantially at an antinode of the radiation.

8. The structure of claim 1 , further comprising a substrate comprising AlN or GaN or sapphire.

9. The structure of claim 8 , wherein the substrate has a thickness less than about 100 μm.

10. The structure of claim 1 , further comprising a heat sink arranged to remove heat from the active region.

11. The structure of claim 10 , wherein the heat sink is adjacent the second reflector.

12. The structure of claim 10 , wherein the heat sink comprises one or more of diamond, copper, copper-tungsten, aluminum, and AlSiC.

13. The structure of claim 1 , wherein the first and second reflectors have reflectivity greater than 99% at the wavelength, λ lase .

14. The structure of claim 1 , wherein the structure is configured to provide output radiation having a line width smaller than 0.5 nm at a power output of more than 20 mW.

15. A vertical external cavity surface emitting laser (VECSEL) structure, comprising:

a first reflector;

a second reflector;

a heterostructure comprising an active region that includes one or more quantum well structures comprising AlGaInN configured to emit radiation at a wavelength, λ lase , having a range from about 200 to about 400 nm, in response to pumping by an electron beam, the active region disposed between the first reflector and the second reflector and spaced apart from the first reflector by an external cavity, the active region having a resonant periodic gain structure such that antinodes of a standing wave in the active region occur near the quantum well structures;

an electron beam source configured to generate the electron beam which is directed toward the active region; and

one or more electrical contacts electrically coupled to the heterostructure and configured to provide a current path that discharges electrons arising from the electron beam pumping of the heterostructure, each of the electrical contacts having the same electrical potential.

16. A method, comprising:

epitaxially growing a heterostructure comprising an active region having one or more quantum well structures comprising AlGaInN and configured to emit radiation in response to an electron beam, the radiation having a wavelength, λ lase , in a range of 200 to 400 nm;

forming a second reflector comprising a distributed Bragg reflector (DBR);

forming one or more electrical contacts electrically coupled to the heterostructure, each of the electrical contacts having the same electrical potential;

arranging the heterostructure, the second reflector, the electrical contact, and a first reflector so that the heterostructure is disposed between the first reflector and the second reflector and the heterostructure is spaced apart from the first reflector by an external cavity; and

arranging an electron beam source to generate the electron beam that pumps the active region, wherein the electrical contact is configured to electrically discharge electrons arising from electron beam pumping of the heterostructure.

17. The method of claim 16 , wherein:

epitaxially growing the heterostructure comprises epitaxially growing the heterostructure on a first major surface of a substrate; and

thinning the substrate to a thickness less than about 100 μm.

18. The method of claim 17 , wherein the substrate comprises AlN or GaN.

19. The method of claim 17 , wherein forming the second reflector comprises depositing a dielectric distributed Bragg reflector (DBR) on a second major surface of the thinned substrate.

20. The method of claim 16 , wherein:

epitaxially growing the heterostructure comprises epitaxially growing the heterostructure on a first major surface of a substrate; and

removing the substrate.

21. The method of claim 20 , wherein forming the second reflector comprises depositing a dielectric distributed Bragg reflector (DBR) on the heterostructure.

Assignments (9)