Mode-hop tolerant semiconductor laser design
Described herein are methods, systems, and apparatuses to utilize a laser device comprising a gain section, a wavelength filter, a first reflector, and a second reflector to form a laser cavity with the first reflector, the laser cavity to include the gain section and the wavelength filter. The wavelength filter is temperature stabilized to a predetermined temperature range and the remaining portions of the laser cavity are not temperature stabilized. The wavelength filter, when at the predetermined temperature range, comprises a plurality of adjacent longitudinal modes such that a difference in modal gain values associated with each of the adjacent longitudinal modes is within a predetermined delta. Thus, the cavity of the laser device is designed to experience some mode hops when the device temperature changes; however, because the wavelength filter is stabilized in temperature, the cavity drift due to these mode hops is within a limited range.
1. A laser, comprising:
a first reflector;
a second reflector forming a laser cavity with the first reflector, the first and second reflectors having a separation that defines a free spectral range (FSR) of the laser cavity;
a temperature-stabilized wavelength filter configured to spectrally filter light propagating in the laser cavity, the temperature-stabilized wavelength filter having a flat wavelength response for wavelengths within a range centered about a center wavelength and having a width of at least twice the FSR of the laser cavity, for temperatures within a specified range of temperatures.
2. The laser of claim 1 , further comprising a gain region disposed within the laser cavity.
3. The laser of claim 2 , wherein:
a roundtrip modal gain of the cavity includes a gain from the gain region, minus a loss from the first reflector, minus a loss from the second reflector, minus a loss from the temperature-stabilized wavelength filter; and
the roundtrip modal gain of the cavity is flat for wavelengths within the range centered about the center wavelength and having the width of at least twice the FSR of the laser cavity.
4. The laser of claim 3 , wherein the flat wavelength response of the temperature-stabilized wavelength filter comprises a roundtrip modal gain within a specified range of roundtrip modal gains.
5. The laser of claim 2 , further comprising an active temperature stabilizer configured to:
keep the temperature-stabilized wavelength filter within the specified range of temperatures, and
allow a first region of the laser cavity away from the temperature-stabilized wavelength filter to have a temperature outside the specified range of temperatures.
6. The laser of claim 5 , further comprising a phase control section included in the laser cavity and configured to adjust the phase of an output signal of the laser cavity in response to a determined temperature change proximate the first region of the laser cavity.
7. The laser of claim 6 , wherein the phase control section comprises at least one of a resistive element thermal tuner, a current injection PIN semiconductor diode, or a reverse bias semiconductor PIN diode.
8. The laser of claim 5 , wherein the active temperature stabilizer comprises at least one of a thermo-electric cooler or microheater.
9. The laser of claim 2 , wherein the gain region is configured to increase the gain of an output signal of the laser during a transition from a first longitudinal mode of the adjacent longitudinal modes to a second longitudinal mode of the adjacent longitudinal modes.
10. The laser of claim 9 , wherein the gain region is further configured to increase signal power at noise peaks from a first longitudinal mode and adjacent longitudinal modes of the laser device.
11. The laser of claim 1 , wherein the temperature-stabilized wavelength filter comprises at least one of a grating, a ring filter, an asymmetric Mach Zehnder interferometer (MZI), or a directional coupler.
12. The laser of claim 1 , wherein the temperature-stabilized wavelength filter is included in the first reflector or the second reflector.
13. The laser of claim 12 , wherein the temperature-stabilized wavelength filter is included in the first reflector and comprises a ling filter to suppress a first set of longitudinal modes, and the second reflector comprises a distributed Bragg reflector (DBR) to suppress a second set of longitudinal modes.
14. A laser, comprising:
a first reflector;
a second reflector forming a laser cavity with the first reflector, the first and second reflectors having a separation that defines a free spectral range (FSR) of the laser cavity;
a gain region disposed within the laser cavity; and
a temperature-stabilized wavelength filter configured to spectrally filter light propagating in the laser cavity;
wherein a roundtrip modal gain of the cavity includes a gain from the gain region, minus a loss from the first reflector, minus a loss from the second reflector, minus a loss from the temperature-stabilized wavelength filter;
wherein the roundtrip modal gain of the cavity is within a specified range of roundtrip modal gains for wavelengths within a range centered about a center wavelength and having a width of at least twice the FSR of the laser cavity, for temperatures within a specified range of temperatures.
15. The laser of claim 14 , further comprising an active temperature stabilizer configured to:
keep the temperature-stabilized wavelength filter within the specified range of temperatures, and
allow a region of the laser cavity away from the temperature-stabilized wavelength filter to have a temperature outside the specified range of temperatures.
16. The laser of claim 14 , further comprising a phase control section included in the laser cavity and configured to adjust the phase of an output signal of the laser cavity in response to a determined temperature change proximate at least one of the gain region, the first reflector, or the second reflector.
17. The laser of claim 16 , wherein:
the phase control section comprises at least one of a resistive element thermal tuner, a current injection PIN semiconductor diode; or a reverse bias semiconductor PLN diode;
the active temperature stabilizer comprises at least one of a thermo-electric cooler or microheater; and
the temperature-stabilized wavelength filter comprises at least one of a grating, a ring filter, an asymmetric Mach Zehnder interferometer (MZI), or a directional coupler.
18. A system, comprising:
a receiver module; and
a transmitter module configured to generate an output signal receivable by the receiver module, the transmitter module including a laser configured to generate the output signal; the laser comprising:
a first reflector;
a second reflector forming a laser cavity with the first reflector, the first and second reflectors having a separation that defines a free spectral range (FSR) of the laser cavity;
a gain region disposed within the laser cavity; and
a temperature-stabilized wavelength filter configured to spectrally filter light propagating in the laser cavity;
wherein a roundtrip modal gain of the cavity includes a gain from the gain region, minus a loss from the first reflector, minus a loss from the second reflector, minus a loss from the temperature-stabilized wavelength filter;
wherein the roundtrip modal gain of the cavity is within a specified range of roundtrip modal gains for wavelengths within a range centered about a center wavelength and having a width of at least twice the FSR of the laser cavity, for temperatures within a specified range of temperatures.
19. The system of claim 18 , further comprising an active temperature stabilizer configured to:
keep the temperature-stabilized wavelength filter within the specified range of temperatures, and
allow a first region of the laser cavity away from the temperature-stabilized wavelength filter to have a temperature outside the specified range of temperatures.
20. The laser of claim 19 , further comprising a phase control section included in the laser cavity and configured to adjust the phase of an output signal of the laser cavity in response to a determined temperature change proximate the first region of the laser cavity.