Crystal of nitride of group-13 metal on periodic table, and method for producing the same
View Patent ↗An object of the present invention is to provide a crystal of a nitride of a Group-13 metal on the Periodic Table which has good crystallinity and has no crystal strain, and to provide a production method for the crystal. The crystal of a nitride of a Group-13 metal on the Periodic Table of the present invention, comprises oxygen atom and hydrogen atom in the crystal and has a ratio of a hydrogen concentration to an oxygen concentration therein of from 0.5 to 4.5.
1. An ammonothermal GaN crystal, having an XRC half-value width in (100) reflection of 28.2 arcsec or less and an absorption coefficient for a wavelength of 445 nm of 1 cm −1 or less.
2. The ammonothermal GaN crystal according to claim 1 , having an XRC half-value width in (102) reflection of less than 28.4 arcsec.
3. The ammonothermal GaN crystal according to claim 1 , having a hydrogen concentration of 1×10 17 atoms/cm 3 or more.
4. The ammonothermal GaN crystal according to claim 1 , having an oxygen concentration of 1×10 17 atoms/cm 3 or more.
5. The ammonothermal GaN crystal according to claim 4 , having an oxygen concentration of 1.0×10 18 atoms/cm −3 or more.
6. The ammonothermal GaN crystal according to claim 4 , having dopant contained therein and activated with a carrier activation rate of from 10 to 90%.
7. The ammonothermal GaN crystal according to claim 4 , having a transparency increased by annealing.
8. The ammonothermal GaN crystal according to claim 1 , having an S-parameter as measured according to a positron annihilation spectroscopy of 0.448 or more.
9. The ammonothermal GaN crystal according to claim 1 , having a positron diffusion length of 15 to 50 nm.
10. A substrate, comprising
the ammonothermal GaN crystal according to claim 1 .
11. An ammonothermal GaN crystal, having an XRC half-value width in (102) reflection of less than 28.4 arcsec and an absorption coefficient for a wavelength of 445 nm of 1 cm −1 or less.
12. The ammonothermal GaN crystal according to claim 11 , having a hydrogen concentration of 1×10 17 atoms/cm 3 or more.
13. The ammonothermal GaN crystal according to claim 11 , having an S-parameter as measured according to a positron annihilation spectroscopy of 0.448 or more.
14. The ammonothermal GaN crystal according to claim 11 , having a positron diffusion length of 15 to 50 nm.
15. A substrate, comprising
the ammonothermal GaN crystal according to claim 11 .
16. The ammonothermal GaN crystal according to claim 11 , having an oxygen concentration of 1.0×10 18 atoms/cm −3 or more.
17. The ammonothermal GaN crystal according to claim 11 , having dopant contained therein and activated with a carrier activation rate of from 10 to 90%.
18. The ammonothermal GaN crystal according to claim 11 , having a transparency increased by annealing.
19. The ammonothermal GaN crystal according to claim 11 , having an oxygen concentration of 1×10 17 atoms/cm −3 or more.