Biased ESD circuit
This document discusses, among other things, a biased electrostatic discharge (ESD) circuit and method configured to reduce capacitance of an ESD structure with little to no change in other ESD structure parameters. A bulk terminal of an ESD device can be negative biased to reduce a drain terminal to source terminal capacitance of the ESD device. A charge pump can be configured to provide a negative bias to the bulk terminal of the ESD device. In certain examples, the gate terminal of the ESD device can be coupled to the source terminal of the ESD device, such as through a resistor, and the source terminal can be coupled to ground.
1. A biased electrostatic discharge (ESD) circuit, comprising:
an ESD device including a gate terminal, a source terminal, a drain terminal, and a bulk terminal, wherein the ESD device is configured to provide an ESD discharge path between the drain terminal and the source terminal; and
at least one three-terminal resistor coupled between the gate terminal of the ESD device and the bulk terminal of the ESD device, the at least one three-terminal resistor having a gate terminal coupled to ground,
wherein the bulk terminal of the ESD device is configured to receive negative bias to reduce the drain terminal to source terminal capacitance of the ESD device.
2. The biased ESD circuit of claim 1 , wherein the source terminal of the ESD device is coupled to ground.
3. The biased ESD circuit of claim 1 , including:
a charge pump coupled to the bulk terminal of the ESD device, wherein the charge pump is configured to provide the negative bias to the bulk terminal.
4. The biased ESD circuit of claim 1 , wherein the negative bias is more negative than a voltage of the source terminal of the ESD device.
5. The biased ESD circuit of claim 1 , wherein the at least one three-terminal resistor includes first, second, and third series-connected, three-terminal resistors, each of the first, second, and third series-connected, three-terminal resistors having a gate terminal coupled to ground.
6. The biased ESD circuit of claim 1 , wherein the ESD device includes an n-type metal oxide semiconductor (NMOS) transistor.
7. The biased ESD circuit of claim 6 , wherein the drain terminal of the NMOS transistor is configured to receive an ESD event and to discharge the ESD event through the source terminal of the NMOS transistor to ground.
8. A biased electrostatic discharge (ESD) system, comprising:
an ESD device including a gate terminal, a source terminal, a drain terminal, and a bulk terminal, wherein the ESD device is configured to provide an ESD discharge path between the drain terminal and the source terminal;
a charge pump configured to provide a negative bias to the bulk terminal of the ESD device; and
at least one three-terminal resistor coupled between the gate terminal of the ESD device and the bulk terminal of the ESD device, the at least one three-terminal resistor having a gate terminal coupled to ground.
9. The biased ESD system of claim 8 , wherein the source terminal of the ESD device is coupled to ground.
10. The biased ESD system of claim 8 , wherein the negative bias is more negative than a voltage of the source terminal of the ESD device.
11. The biased ESD system of claim 8 , wherein the ESD device includes an n-type metal oxide semiconductor (NMOS) transistor, and
wherein the drain terminal of the NMOS transistor is configured to receive an ESD event and to discharge the ESD event through the source terminal of the NMOS transistor to ground.
12. A method to reduce a capacitance of an electrostatic discharge (ESD) circuit, comprising:
providing an ESD discharge path between a drain terminal and a source terminal of an ESD device; and
providing a negative bias to a bulk terminal of the ESD device to reduce the drain terminal to source terminal capacitance of the ESD device, wherein a gate terminal of the ESD device is coupled to the bulk terminal of the ESD device through a resistor, the resistor including at least one three-terminal resistor having a gate terminal coupled to ground.
13. The method of claim 12 , wherein the source terminal of the ESD device is coupled to ground.
14. The method of claim 12 , wherein providing the negative bias to the bulk terminal of the ESD device includes using a charge pump coupled to the bulk terminal of the ESD device.
15. The method of claim 12 , wherein the negative bias is more negative a voltage of the source terminal of the ESD device.
16. The method of claim 12 , wherein the at least one three-terminal resistor includes first, second, and third series-connected, three-terminal resistors, each of the first, second, and third series-connected, three-terminal resistors having a gate terminal coupled to ground.
17. The method of claim 12 , wherein the ESD device includes an n-type metal oxide semiconductor (NMOS) transistor, and
wherein providing the ESD discharge path includes receiving an ESD event at a drain terminal of the NMOS transistor and discharging the ESD event through the source terminal of the NMOS transistor to ground.