According to one embodiment, a display device includes a thin-film transistor. The thin-film transistor includes a gate electrode, an insulating layer disposed to superpose the gate electrode, and a semiconductor layer disposed on the insulating layer. The gate electrode is opposed to at least the semiconductor layer in part. The gate electrode includes a laminate including a first layer containing silicon as a main component and a second layer which contains titanium as a main component and which is in contact with the first layer, and is in contact with the insulating layer.
1. A display device comprising a thin-film transistor,
the thin-film transistor comprising a gate electrode, an insulating layer disposed to superpose the gate electrode, and a semiconductor layer disposed on the insulating layer,
the gate electrode being opposed to at least the semiconductor layer in part, the gate electrode comprising a laminate including a first layer containing silicon as a main component and a second layer which contains titanium as a main component and which is in contact with the first layer, and being in contact with the insulating layer,
the first layer and the second layer forming a silicide region silicified in vicinity of at least a boundary between the first layer and the second layer,
the silicide region storing hydrogen.
2. The display device of claim 1 , wherein
the semiconductor layer is an oxide semiconductor layer containing at least one of indium, gallium and zinc.
3. The display device of claim 1 , wherein
the first layer is located more closely to the semiconductor layer than to the second layer.
4. The display device of claim 1 , wherein
the second layer is located more closely to the semiconductor layer than to the first layer.