IP Library Granted Patent US 9,304,212
Granted Patent B2
US 9,304,212 · App. 14/836,199 · Granted Apr 5, 2016

Scintillator panel and manufacturing method therefor and radiation detector and manufacturing method therefor

Inventor: Atsuya Yoshida (Utsunomiya, JP)
Assignees: Kabushiki Kaisha Toshiba; Toshiba Electron Tubes & Devices Co., Ltd.
G01T1/2018C09K11/628G01T1/202G21K4/00H01L31/18G21K2004/06
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Quick Facts
Patent No.
US 9,304,212
App. No.
14/836,199
Granted
Apr 5, 2016
Kind
B2
Abstract

A scintillator panel is provided with a substrate which transmits radiation ray and a phosphor layer which is present on the surface of the substrate and which is made of a thallium-activated cesium iodide that can convert an incident radiation to visible light. The phosphor layer is covered with a moisture-proof film. The phosphor layer is an alternating laminate composed of high thallium concentration layers and low thallium concentration layers that have a thallium concentration lower than that of the high-thallium concentration layers, wherein the thickness of one thallium concentration cycle in the lamination direction is 40 nm or less.

Claims (13)

1. A scintillator panel, which comprises:

a substrate through which radiation ray is transmitted; and

a phosphor layer which is provided on a surface of the substrate, converts incident radiation to visible light, and is formed from thallium-activated cesium iodide, and in which

the phosphor layer is obtained by alternately stacking a high thallium concentration layer and a low thallium concentration layer having a lower thallium concentration than the high thallium concentration layer, and has a period of the thallium concentration in a stacking direction of 40 nm or less.

2. The panel according to claim 1 , wherein the period is 15 nm or less.

3. A radiation detector, which comprises:

a photoelectric conversion panel in which a sensor that converts visible light to an electric signal is disposed;

a scintillator layer which is provided on a surface of the photoelectric conversion panel, converts incident radiation to visible light, and is formed from thallium-activated cesium iodide, and in which

the scintillator layer is obtained by alternately stacking a high thallium concentration layer and a low thallium concentration layer having a lower thallium concentration than the high thallium concentration layer, and has a period of the thallium concentration in a stacking direction of 40 nm or less.

4. A scintillator panel, which comprises:

a substrate through which radiation ray is transmitted; and

a scintillator layer which is provided on a surface of the substrate, converts incident radiation to visible light, and is formed from thallium-activated cesium iodide, and in which

the scintillator layer is obtained by alternately stacking a high thallium concentration layer and a low thallium concentration layer having a lower thallium concentration than the high thallium concentration layer.

Assignments (3)
CHANGE OF NAME Recorded Dec 7, 2018
From: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
To: CANON ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 047701/0768 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2016
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 038896/0322 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 5, 2015
From: YOSHIDA, ATSUYA
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 036965/0432 →
Priority Claims (1)
JP 2013-084734 · Apr 15, 2013 · national
Continuity (2)
Continuation PCTJP2014059835 · Apr 3, 2014
Related Publication 20150362602A1 · Dec 17, 2015