An embodiment of a solar cell is provided comprising a silicon substrate, on a first surface of which a texture structure including mountain portions and valley portions is formed, and an amorphous silicon layer provided on the first surface of the silicon substrate. The texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other. The valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller. The amorphous silicon layer includes an epitaxial growth area grown from the valley portion, the epitaxial growth area on the valley portion is thicker than that on a region other than the valley portion.
1. A solar cell comprising:
a monocrystalline silicon substrate having a conductivity type, the monocrystalline silicon substrate including a first surface, wherein the first surface has a texture structure including mountain portions and valley portions; and
an amorphous silicon layer provided on the first surface of the monocrystalline silicon substrate, wherein
the texture structure, in a cross section passing through the mountain portions and the valley portions, including pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other,
the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller,
wherein the amorphous silicon layer includes an epitaxial growth area on the valley portion and no epitaxial growth area on the slant portions, the conductivity of the epitaxial growth area being higher than that of the other area of the amorphous silicon layer.
2. The solar cell according to claim 1 , wherein
the amorphous silicon layer includes an amorphous silicon film separating from the first surface of the monocrystalline silicon substrate, the dopant concentration of the amorphous silicon film being 1×10 20 /cm 3 or higher.
3. The solar cell according to claim 2 , wherein
the amorphous silicon film has a different conductivity type from the conductivity type of the monocrystalline silicon substrate.
4. The solar cell according to claim 2 , wherein
the amorphous silicon layer includes a substantially intrinsic amorphous silicon film provided on the first surface of the monocrystalline silicon substrate, and the amorphous silicon film provided on the substantially intrinsic amorphous silicon film,
the amorphous silicon film has a different conductivity type from the conductivity type of the monocrystalline silicon substrate, and
the epitaxial growth area on the valley portion extends through the substantially intrinsic amorphous silicon film.
5. The solar cell according to claim 2 , wherein
the amorphous silicon film has the same conductivity type as the conductivity type of the monocrystalline silicon substrate.
6. The solar cell according to claim 2 , wherein
the amorphous silicon layer includes a substantially intrinsic amorphous silicon film provided on the first surface of the monocrystalline silicon substrate, and the amorphous silicon film provided on the substantially intrinsic amorphous silicon film, and
the amorphous silicon film has the same conductivity type as the conductivity type of the monocrystalline silicon substrate.
7. A solar cell comprising:
a monocrystalline silicon substrate having a conductivity type, the monocrystalline silicon substrate including a first surface and a second surface opposite the first surface, each of the first and the second surfaces has texture structure including mountain portions and valley portions;
a first amorphous silicon layer provided on the first surface of the monocrystalline silicon substrate; and
a second amorphous silicon layer provided on the second surface of the monocrystalline silicon substrate, wherein
the texture structure, in a cross section passing through the mountain portions and the valley portions, includes pairs of slant portions, each pair slanting to extend from a pair of neighboring ones of the mountain portions toward the valley portion therebetween while coming closer to each other,
the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller,
each of the first and second amorphous silicon layers provided on the first and second surface of the monocrystalline silicon substrate includes an epitaxial growth area on the valley portion and no epitaxial growth area on the slant portions.
8. The solar cell according to claim 7 , wherein
the conductivity of the epitaxial growth areas on the valley portions on the first and second surfaces is higher than that of the other areas of the first and second amorphous silicon layers.
9. The solar cell according to claim 7 , wherein
the first amorphous silicon layer includes a first amorphous silicon film separating from the first surface of the monocrystalline substrate, the dopant concentration of the first amorphous silicon film being 1×10 20 /cm 3 or higher, and
the second amorphous silicon layer includes a second amorphous silicon film separating from the second surface of the monocrystalline substrate, the dopant concentration of the second amorphous silicon film being 1×10 20 /cm 3 or higher.
10. The solar cell according to claim 9 , wherein
the first amorphous silicon layer includes a substantially intrinsic first amorphous silicon film provided on the first surface of the monocrystalline silicon substrate, and the first amorphous silicon film provided on the substantially intrinsic first amorphous silicon film, and
the epitaxial growth area on the valley portion on the first surface reaches the first amorphous silicon film through the substantially intrinsic first amorphous silicon film.
11. The solar cell according to claim 10 , wherein
the second amorphous silicon layer includes a substantially intrinsic second amorphous silicon film provided on the second surface of the monocrystalline silicon substrate, and the second amorphous silicon film provided on the substantially intrinsic second amorphous silicon film, and
the epitaxial growth area on the valley portion on the second surface does not reach the second amorphous silicon film through the substantially intrinsic second amorphous silicon film.
12. The solar cell according to claim 9 , wherein
the conductivity type of the monocrystalline silicon substrate is an n-type,
the conductivity type of the first amorphous silicon film is the n-type, and
the conductivity type of the second amorphous silicon film is a p-type.
13. The solar cell according to claim 9 , further comprising a transparent electrode on the first amorphous silicon film, wherein
the epitaxial growth area on the valley portion on the first surface reaches the transparent electrode through the first amorphous silicon film.
14. The solar cell according to claim 2 , further comprising a transparent electrode on the amorphous silicon film, wherein
the epitaxial growth area reaches the transparent electrode through the amorphous silicon film.
15. The solar cell according to claim 2 , wherein
the conductivity type of the monocrystalline silicon substrate is an n-type, and
the conductivity type of the amorphous silicon film is the n-type.
16. The solar cell according to claim 3 , wherein
the monocrystalline silicon substrate includes a second surface opposite to the first surface, wherein the second surface including a texture structure including mountain portions, valley portions, and slant portions between the mountain portions and the valley portions, such that the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller,
the solar cell further comprises an amorphous silicon layer provided on the second surface, wherein
the amorphous silicon layer on the second surface includes an epitaxial growth area on the valley portion of the second surface, and
a thickness of the epitaxial growth area on the valley portion of the second surface is thicker than a thickness of the epitaxial growth area on the valley portion of the first surface.
17. The solar cell according to claim 4 , wherein
the monocrystalline silicon substrate includes a second surface opposite to the first surface, wherein the second surface including a texture structure including mountain portions, valley portions, and slant portions between the mountain portions and the valley portions, such that the valley portion located between the slant portions is in a round shape with a radius of curvature of 150 nm or smaller,
the solar cell further comprises an amorphous silicon layer provided on the second surface, wherein
the amorphous silicon layer on the second surface includes an epitaxial growth area on the valley portion of the second surface, and
a thickness of the epitaxial growth area on the valley portion of the second surface is thicker than a thickness of the epitaxial growth area on the valley portion of the first surface.