Storage device with contacts contacting different wiring layers and manufacturing method thereof
View Patent ↗A storage device includes a first wiring layer, a second wiring layer above the first wiring layer, a third wiring layer above the second wiring layer, a first contact in electrical contact with the first and third wiring layers and electrically insulated from the second wiring layer, a second contact in electrical contact with the first and second wiring layers and electrically insulated from the third wiring layer, and an insulating layer in contact with the second contact and above the third wiring layer, the first contact, and the second contact.
1. A storage device comprising:
a first wiring layer;
a second wiring layer above the first wiring layer;
a third wiring layer above the second wiring layer;
a first contact in electrical contact with the first and third wiring layers and electrically insulated from the second wiring layer;
a second contact in electrical contact with the first and second wiring layers and electrically insulated from the third wiring layer; and
an insulating layer provided on an upper surface of the second contact and the third wiring layer
wherein an upper surface of the first contact is higher than the upper surface of the second contact, and the upper surface of the second contact is higher than an upper surface of the second wiring layer.
2. The device according to claim 1 , wherein the upper surface of the second contact is higher than an upper surface of the second wiring layer.
3. The device according to claim 1 , wherein the insulating layer electrically insulates the second contact from the third wiring layer.
4. The device according to claim 1 , wherein the first contact and the second contact are made of the same material.
5. The device according to claim 4 , wherein the first contact and the second contact are formed using chemical vapor deposition.
6. The device according to claim 1 , further comprising:
a third contact in electrical contact with the first, second, and third wiring layers.
7. The device according to claim 6 , wherein the first contact, the second contact, and the third contact are made of the same material.
8. The device according to claim 7 , wherein the first contact, the second contact, and the third contact are formed using chemical vapor deposition.
9. The device according to claim 1 , further comprising:
a memory cell, wherein the second wiring layer is electrically connected to the memory cell.
10. The device according to claim 1 , wherein the insulating layer is directly contacting the upper surface of the second contact.
11. A storage device comprising:
a first wiring layer;
a second wiring layer above the first wiring layer in a first direction;
a third wiring layer above the second wiring layer in the first direction;
a first contact extending in the first direction from the first wiring layer to the third wiring layer and electrically connecting the first and third wiring layers, the first contact electrically insulated from the second wiring layer;
a second contact extending in the first direction from the first wiring layer to the second wiring layer and electrically connecting the first and second wiring layers, the second contact electrically insulated from the third wiring layer; and
an insulating layer directly contacting an upper surface of the second contact and the third wiring layer,
wherein an upper surface of the first contact is higher than the upper surface of the second contact in the first direction.
12. The device according to claim 11 , wherein the upper surface of the second contact is higher than an upper surface of the second wiring layer in the first direction.
13. The device according to claim 11 , wherein the insulating layer is between the second contact from the third wiring layer in a second direction crossing the first direction.
14. The device according to claim 11 , wherein the first contact and the second contact are made of the same material.
15. The device according to claim 14 , wherein the first contact and the second contact are formed using chemical vapor deposition.
16. The device according to claim 11 , further comprising:
a third contact extending in the first direction from the first wiring layer to the third wiring layer and electrically connecting the first, second, and third wiring layers.
17. The device according to claim 16 , wherein the first contact, the second contact, and the third contact are made of the same material.
18. The device according to claim 17 , wherein the first contact, the second contact, and the third contact are formed using chemical vapor deposition.
19. The device according to claim 11 , further comprising:
a memory cell, wherein the second wiring layer is electrically connected to the memory cell.