A memory device includes a substrate, a first conductive layer above the substrate and extending in a first direction parallel to a surface of the substrate, a second conductive layer above the first conductive layer and extending in the first direction, wherein centers of the first and second conductive layers are aligned in a second direction that is substantially perpendicular to the surface of the substrate, and a contact extending in the second direction from a position lower than the first conductive layer to a position higher than the second conductive layer, the contact being electrically connected to and in direct contact with the first conductive layer and electrically insulated and physically separated from the second conductive layer.
1. A memory device comprising:
a substrate;
a first contact extending in a first direction that crosses a surface of the substrate;
a second contact extending in the first direction, the first and second contacts being aligned in a second direction along the surface of the substrate;
a first conductive layer above the substrate and extending in a third direction that is along the surface of the substrate and crosses the second direction, the first conductive layer being formed between the first contact and the second contact in the second direction, and electrically connected to and in direct contact with the first contact and the second contact;
a second conductive layer above the first conductive layer in the first direction and extending in the third direction, the second conductive layer being formed between the first contact and the second contact in the second direction, and electrically insulated and physical separated from the first contact and the second contact.
2. The device according to claim 1 , further comprising:
a third conductive layer above the second conductive layer in the first direction and extending in the third direction, the third conductive layer being formed between the first contact and the second contact, and electrically insulated and physical separated from the first contact and the second contact.
3. The device according to claim 2 , wherein widths of portions of the second and third conductive layers that are positioned between the first contact and the second contact in the second direction are less than a width of a portion of the first conductive layer that is positioned between the first contact and the second contact in the second direction.
4. The device according to claim 1 , further comprising:
a fourth conductive layer between the substrate and the first conductive layer and electrically connected to the first conductive layer through the pair of first and second contacts.
5. The device according to claim 4 , wherein widths of a portion of the first conductive layer and a portion of the fourth conductive layer that are positioned between the first contact and the second contact in the second direction are substantially the same.
6. The device according to claim 4 , wherein a width of a portion of the first conductive layer that is positioned between the first contact and the second contact in the second direction is less than a width of a portion of the fourth conductive layer that is positioned between the first contact and the second contact in the second direction.
7. The device according to claim 1 , wherein the first contact is in direct contact with a first lateral side of a portion of the first conductive layer and the second contact is in direct contact with a second lateral side of the portion of the first conductive layer that is opposite from the first lateral side.
8. The device according to claim 1 , wherein
the first conductive layer is electrically connected to a first memory cell, and
the second conductive layer is electrically connected to a second memory cell.
9. The device according to claim 8 , wherein
the second memory cell is located above the first memory cell and the first and second memory cells are aligned in the first direction.
10. A memory device comprising:
a substrate;
a first contact extending in a first direction that crosses a surface of the substrate;
a second contact extending in the first direction, the first and second contacts being aligned in a second direction along the surface of the substrate;
a third contact extending in the first direction, the first and third contacts being aligned in a third direction that is along the surface of the substrate and crosses the second direction;
a fourth contact extending in the first direction, the second and fourth contacts being aligned in the third direction, and the third and fourth contact being aligned in the second direction;
a first conductive layer above the substrate and extending in a third direction, wherein the first conductive layer is formed between the first contact and the second contact and between the third contact and the fourth contact, electrically connected to and in direct contact with the first and second contacts, and electrically insulated and physical separated from the third contact and the fourth contact;
a second conductive layer above the first conductive layer in the first direction and extending in the third direction, wherein the second conductive layer is formed between the first contact and the second contact and between the third contact and the fourth contact, electrically insulated and physically separated from the first and second contacts, and electrically connected to and in direct contact with the third and fourth contacts.
11. The device according to claim 10 , further comprising:
a third conductive layer above the second conductive layer in the first direction and extending in the third direction, wherein the third conductive layer is formed between the first contact and the second contact and between the third contact and the fourth contact, and electrically insulated and physical separated from the first, second, third, and fourth contacts.
12. The device according to claim 11 , further comprising:
a fourth conductive layer between the substrate and the first conductive layer and electrically connected to the first conductive layer through the first and second contacts and electrically connected to the second conductive layer through the third and fourth contacts.
13. The device according to claim 10 , wherein widths of the first and second conductive layers in the second direction vary along the third direction.
14. The device according to claim 13 , wherein the width of a portion of the first conductive layer between the first contact and the second contact and the width of a portion of the second conductive layer between the third contact and the fourth contact are substantially the same.
15. The device according to claim 10 , wherein the first contact is in direct contact with a first lateral side of the first conductive layer and the second contact is in direct contact with a second lateral side of the first conductive layer that is opposite from the first lateral side of the first conductive layer, and the third contact is in direct contact with a first lateral side of the second conductive layer and the fourth contact is in direct contact with a second lateral side of the second conductive layer that is opposite from the first lateral side of the second conductive layer.
16. The device according to claim 10 , wherein
the first conductive layer is electrically connected to a first memory cell, and
the second conductive layer is electrically connected to a second memory cell.
17. The device according to claim 16 , wherein
the second memory cell is located above the first memory cell and the first and second memory cells are aligned in the first direction.
18. The device according to claim 1 , further comprising:
an insulating layer formed between the first contact and the second conductive layer and between the second contact and the second conductive layer.
19. The device according to claim 10 , further comprising:
an insulating layer formed between the first contact and the second conductive layer and between the second contact and the second conductive layer.