Switchable filters and design structures
Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.
1. A filter comprising:
at least one filter comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate; and
a beam structure positioned to turn on the at least one filter by moving the beam structure such that electrodes become interleaved in contact with the at least one piezoelectric substrate or the at least one piezoelectric substrate becomes sandwiched between the electrodes.
2. The filter of claim 1 , wherein the beam structure is a MEMS beam with the interleaved electrodes formed within an opening thereof, on a same level as the MEMS beam.
3. The filter of claim 1 , wherein the beam structure is positioned over the interleaved electrodes formed on an underlying insulator layer.
4. The filter of claim 1 , wherein portions of the interleaved electrodes are formed on a same level as the beam structure and an underlying insulator layer.
5. The filter of claim 1 , wherein the at least one piezoelectric substrate is provided on the MEMS beam, and portions of the interleaved electrodes are formed on a surface of the at least one piezoelectric substrate and an underlying insulator layer.
6. The filter of claim 1 , wherein the at least one filter is a SAW filter.
7. The filter of claim 6 , wherein the beam structure is a MEMS beam structure.
8. The filter of claim 7 , wherein the MEMS beam structure is one of a cantilever beam and a bridge beam.
9. The filter of claim 6 , wherein the piezoelectric layer is formed within an opening of the MEMS beam structure.
10. The filter of claim 9 , wherein the plurality of electrodes comprise an interleaved signal electrode and ground electrode formed below the piezoelectric layer on an insulator layer.
11. The filter of claim 10 , wherein an actuator is formed on the insulator layer, which faces the MEMS beam structure.
12. The filter of claim 9 , wherein the plurality of electrodes comprise a signal electrode on an underside of the piezoelectric layer and a ground electrode on the insulator layer.