Semiconductor memory device having a heat conduction member
View Patent ↗A semiconductor memory device includes a substrate having a conductive region on a surface thereof, a semiconductor memory unit, a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate, a housing enclosing the substrate, and a heat conduction member in contact with and pressed between the conductive region and a portion of the housing.
1. A semiconductor memory device, comprising:
a substrate having a conductive region on a surface thereof;
a semiconductor memory unit;
a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate;
a housing enclosing the substrate; and
a heat conduction member in contact with and pressed between the conductive region and a portion of the housing, wherein the heat conduction member is made of an electrically-insulating material.
2. The semiconductor memory device according to claim 1 , wherein
the portion of the housing extends into an interior of the housing from a side thereof.
3. The semiconductor memory device according to claim 1 , wherein
the heat conduction member has an elasticity that is greater than those of the substrate and the housing.
4. The semiconductor memory device according to claim 1 , wherein
the conductive region is disposed at a position adjacent to an edge of the substrate.
5. The semiconductor memory device according to claim 1 , wherein
the semiconductor memory unit and the memory controller are both disposed on the substrate, and
the heat conduction member is disposed at a position that is closer to the semiconductor memory unit than to the memory controller.
6. The semiconductor memory device according to claim 1 , wherein
the substrate includes a conductive layer, an insulating layer having a portion in which the conductive region is formed, and a plurality of vias electrically connecting the conductive layer and the conductive region.
7. The semiconductor memory device according to claim 1 , wherein
the housing includes a first cover member covering a portion of the surface of the substrate, a second cover member covering another portion of the surface of the substrate, and a heat insulating member disposed between the first cover member and the second cover member.
8. The semiconductor memory device according to claim 1 , wherein
the housing includes a top cover member and a bottom cover member, and
the heat conduction member is pressed between the conductive region and the top cover member.
9. The semiconductor memory device according to claim 8 , wherein the substrate has a second conductive region on a second surface thereof that is opposite to the surface, the semiconductor memory device further comprising:
a second heat conduction member in contact with and pressed between the second conductive region and the bottom cover member.
10. A semiconductor memory device, comprising:
a first substrate having a first conductive region on a first surface thereof, and a second conductive region and a connector on a second surface thereof, the second surface being opposite to the first surface;
a second substrate positioned on the second surface side of the first substrate and electrically connected to the connector;
a semiconductor memory unit disposed on the first substrate;
a memory controller disposed on the second substrate;
a housing enclosing the first and second substrates and including a top cover member and a frame member;
a first heat conduction member in contact with and pressed between the first conductive region and the top cover member; and
a second heat conduction member in contact with and pressed between the second conductive region and the frame member.
11. The semiconductor memory device according to claim 10 , wherein
the first conductive region is disposed at a position corresponding to the connector.
12. The semiconductor memory device according to claim 10 , wherein
the first and second conductive regions are disposed at positions of the first substrate corresponding to each other.
13. The semiconductor memory device according to claim 10 , wherein the second substrate has a third conductive region on a surface facing the first substrate, the semiconductor memory device further comprising:
a third heat conduction member in contact with and pressed between the third conductive region and the frame member.
14. The semiconductor memory device according to claim 13 , wherein
the second and third heat conduction members are disposed at positions of the frame member corresponding to each other.
15. A semiconductor memory device, comprising:
a substrate having a conductive region on a surface thereof;
a semiconductor memory unit;
a memory controller, at least one of the semiconductor memory unit and the memory controller being disposed on the substrate;
a housing enclosing the substrate; and
a heat conduction member in contact with and between the conductive region and a portion of the housing, such that heat is transferred from the conductive region to the portion of the housing therethrough, wherein the heat conduction member is made of an electrically-insulating material.
16. The semiconductor memory device according to claim 15 , wherein
the portion of the housing extends into an interior of the housing.
17. The semiconductor memory device according to claim 15 , wherein
the heat conduction member has an elasticity that is greater than those of the substrate and the housing.
18. The semiconductor memory device according to claim 15 , wherein
the conductive region is disposed near an edge of the substrate.