MULTI-PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

1 . A multi-processing apparatus comprising:

an electron beam irradiation unit;

a dry etching unit; and

a transferring unit connected to the electron beam irradiation unit and the dry etching unit, the transferring unit being configured to transfer a wafer under a reduced-pressure atmosphere from the electron beam irradiation unit to the dry etching unit.

2 . The multi-processing apparatus according to claim 1 , wherein the electron beam irradiation unit is electrically insulated from the transferring unit.

3 . The multi-processing apparatus according to claim 1 , further comprising an isolation wall between the electron beam irradiation unit and the transferring unit, the isolation wall including a dielectric material.

4 . The multi-processing apparatus according to claim 1 , further comprising:

a controller sending control commands to the electron beam irradiation unit and the dry etching unit; and

a communication module provided between the controller and the electron beam irradiation unit, the communication module transmitting and receiving the control commands via optical signals.

5 . The multi-processing apparatus according to claim 1 , further comprising a plasma irradiation unit connected to the transferring unit.

6 . The multi-processing apparatus according to claim 5 , further comprising a controller programmed to irradiate the wafer with an electron beam in the electron beam irradiation unit after exposing the wafer to plasma in the plasma irradiation unit.

7 . The multi-processing apparatus according to claim 1 , wherein the transferring unit transfers the wafer in a reduced-pressure atmosphere at 10 Pa or less.

8 . The multi-processing apparatus according to claim 1 , wherein the transferring unit transfers the wafer in an atmosphere containing oxygen with a concentration of 20 ppm or less.

9 . The multi-processing apparatus according to claim 1 , wherein the electron beam irradiation unit holds the wafer at a predetermined temperature in a temperature range from −40° C. to 290° C.

10 . The mufti-processing apparatus according to claim 1 , wherein the electron beam irradiation unit holds the wafer at a predetermined potential.

11 . The multi-processing apparatus according to claim 1 , wherein the electron beam irradiation unit includes at least one of a heater and a cooling device.

12 . The multi-processing apparatus according to claim 1 , wherein the electron beam irradiation unit includes an oxygen concentration monitor.

13 . The multi-processing apparatus according to claim 1 , further comprising a gate unit connected to the transferring unit, the gate unit including a neutralization device that removes charges of the wafer.

14 . The multi-processing apparatus according to claim 1 , further comprising a temperature adjustment unit holding the wafer at a predetermined temperature.

15 . A method for manufacturing a semiconductor device comprising:

irradiating a resist film formed on a wafer with an electron beam; and

dry-etching the wafer using the resist film,

the irradiating and the dry-etching being continuously performed under a reduced-pressure atmosphere.

16 . The method according to claim 15 , further comprising exposing the resist film to plasma before irradiating the resist film with the electron beam,

wherein the wafer is continuously treated under the reduced-pressure atmosphere through the irradiating, the dry-etching, and the exposing.

17 . The method according to claim 15 , further comprising removing charges of the wafer before the irradiating the wafer with the electron beam.

18 . The method according to claim 15 , wherein the wafer is irradiated with the electron beam under a condition, and over half of electrons are stopped in a surface layer of the resist film.