Memory system
A memory system includes a memory device, and a controller which controls the memory device. The memory device includes a plurality of memory cells capable of rewriting data, a plurality of word lines connected to the plurality of memory cells, a page including the plurality of memory cells connected to the same word line, a plane including a plurality of pages, a memory cell array including a plurality of planes, and a plurality of word line drivers which apply voltages to the plurality of word lines, and a plurality of switches provided for each plane and which assigns the word line drivers to the word lines.
1. A memory system comprising:
a memory device; and
a controller which controls the memory device,
the memory device comprising:
a first plane including a plurality of first blocks, the first blocks including a plurality of first memory cells, and gates of the first memory cells being coupled to first word lines;
a second plane including a plurality of second blocks, the second blocks including a plurality of second memory cells, and gates of the second memory cells being coupled to second word lines;
a plurality of word line drivers configured to apply voltages to a plurality of word lines; and
a plurality of switches coupled to the word line drivers, the first plane, and the second plane, the switches being configured to control connections between the word line drivers and the first plane, and between the word line drivers and the second plane, the switches being configured to allocate m word line drivers (m being a natural number) to the first plane during a read operation for the first plane, and the switches being configured to allocate n word line drivers (n being a natural number, with n being different from m) to the first plane during a write operation for the first plane,
wherein the controller issues, to the memory device, a command to simultaneously execute first data read for a selected first block and second data read for a selected second block.
2. The memory system according to claim 1 , wherein when receiving the first data read command and the second data read command from the controller, the memory device simultaneously reads data from the first plane and the second plane.
3. The memory system according to claim 1 , wherein when a plurality of access requests to the memory device are input, the controller combines a plurality of accesses to the first and second planes, and allocates the plurality of word line drivers to the plurality of word lines of the first and second planes on a plane basis using the switches.
4. The memory system according to claim 1 , wherein when a plurality of access requests to the memory device are input, the controller combines a plurality of accesses to pages that belong to the first and second planes, and allocates the plurality of word line drivers to the plurality of word lines of the first and second planes on a plane basis using the switches.
5. The memory system according to claim 1 , wherein when a plurality of access requests to the memory device are input, the controller combines a plurality of accesses to the first and second planes and data associated with each other, and allocates the plurality of word line drivers to the plurality of word lines of the first and second planes on a plane basis using the switches.
6. The memory system according to claim 3 , wherein the controller combines the plurality of accesses for reading data.
7. The memory system according to claim 3 , wherein the controller combines the plurality of accesses for programing data.
8. The memory system according to claim 1 , further comprising a power supply which supplies a voltage to the first and second planes,
wherein the plurality of word line drivers supply the voltage supplied from the power supply to the first and second planes simultaneously.
9. The memory system according to claim 1 , wherein when determining that externally supplied first data and second data are associated, the controller stores the first data and the second data in the first and second planes.
10. The memory system according to claim 1 , wherein when MLC data is stored in the first plane, and hSLC data whose threshold is higher than that of SLC data is stored in the second plane, the controller simultaneously reads the MLC data stored in the first plane and the hSLC data stored in the second plane.
11. The memory system according to claim 1 , wherein when SLC data is stored in the first plane, and hSLC data whose threshold is higher than that of the SLC data is stored in the second plane, the controller simultaneously reads the SLC data stored in the first plane and the hSLC data stored in the second plane.
12. The memory system according to claim 1 , wherein when MLC data is stored in the first plane, and SLC data is stored in the second plane, the controller simultaneously reads the MLC data stored in the first plane and the SLC data stored in the second plane.
13. The memory system according to claim 1 , wherein the controller further comprises a queue area which receives a plurality of access requests.
14. The memory system according to claim 1 , wherein the controller reads a plurality of data from the plurality of word lines belonging to the first and second planes in one data read sequence.
15. The memory system according to claim 1 , wherein the controller further comprises a storage unit which holds range information of the word lines, and the controller controls the switches based on the range information.
16. The memory system according to claim 1 , wherein the memory device comprises a 3D stacked nonvolatile semiconductor memory.
17. The memory system according to claim 1 , wherein the memory device comprises a NAND flash memory.
18. The memory system according to claim 1 , wherein the switches are configured to allocate m word line drivers to the first plane and m word line drivers of remaining ones of the word line drivers to the second plane during a read operation for the first plane and the second plane.