ESD protection circuit and RF switch
An ESD protection circuit is connected in parallel to a MIM capacitor between a first terminal and a second terminal. First Schottky diodes are connected in series to each other and have anodes connected on the first terminal side and cathodes connected on the second terminal side. Second Schottky diodes are connected in series to each other and connected in anti-parallel to the first Schottky diodes. When an RF signal is inputted to neither the first terminal nor the second terminal, the first terminal has a higher DC voltage than that of the second terminal. The number of the first Schottky diodes is greater than the number of the second Schottky diodes. The number of the second Schottky diodes is set such that an amplitude of the RF signal does not attenuate to predetermined amplitude of the RF signal when the RF signal passes through the MIM capacitor.
1. An ESD protection circuit connected in parallel to a MIM capacitor between a first terminal and a second terminal, comprising first and second ESD protection circuits connected in anti-parallel to each other,
the first ESD protection circuit includes a first transistor being depression-mode and field-effect type, a plurality of first Schottky diodes connected in series to each other, a second Schottky diode and a first resistor,
a drain of the first transistor is connected to the first terminal,
a source of the first transistor is connected to anodes of the plurality of first Schottky diodes,
a gate of the first transistor is connected to an anode of the second Schottky diode,
cathodes of the plurality of first Schottky diodes are connected to a cathode of the second Schottky diode and are connected to the second terminal,
the first resistor is connected in series to the second Schottky diode,
a product of built-in voltage and the number of the plurality of first Schottky diodes is higher than a threshold voltage of the first transistor,
the second ESD protection circuit includes a second transistor being depression-mode and field-effect type, a plurality of third Schottky diodes connected in series to each other, a fourth Schottky diode and a second resistor,
a drain of the second transistor is connected to the second terminal,
a source of the second transistor is connected to anodes of the plurality of third Schottky diodes,
a gate of the second transistor is connected to an anode of the fourth Schottky diode,
cathodes of the plurality of third Schottky diodes are connected to a cathode of the fourth Schottky diode and are connected to the first terminal,
the second resistor is connected in series to the fourth Schottky diode, and
a product of built-in voltage and the number of the plurality of third Schottky diodes is higher than a threshold voltage of the second transistor.
2. The ESD protection circuit according to claim 1 , further comprising first and second MIM capacitors connected in parallel to the first and second resistors respectively.
3. An RF switch connected to an output of a power amplifier, comprising:
an input terminal;
an output terminal;
a transistor being a depletion-mode HEMT connected between the input terminal and the output terminal;
a third MIM capacitor connected between the input terminal and the transistor;
a fourth MIM capacitor connected between the output terminal and the transistor; and
first and second ESD protection circuits connected in parallel to the third and fourth MIM capacitors respectively,
wherein the first and second ESD protection circuits are the ESD protection circuits according to claim 1 .