Semiconductor device with power on reset circuitry
A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. When a data signal stored in a storage section is at “0,” the reset is canceled by bringing an internal reset signal to the “H” level when a relatively short time has passed after the rising edge of a power on reset signal. When the data signal is at “1,” the reset is canceled by bringing the internal reset signal to the “H” level when a relatively long time has passed after the rising edge of the power on reset signal. Therefore, a wasteful standby time at power-on can be reduced by writing the data signal logically equivalent to the rise time of supply voltage to the storage section.
1. A microcomputer comprising:
a central processing unit (CPU) that receives a power supply voltage;
a power-on-reset unit that sets a reset signal to reset the CPU when the power supply voltage is lower than a threshold voltage, and cancels the reset signal when the power supply voltage is equal to or higher than the threshold voltage;
a storage unit that stores a value indicating a rise time of the power supply voltage; and
a delay unit that delays cancellation of the reset signal,
wherein the storage unit stores a first value when the rise time is a first time and a second value when the rise time is a second time, the first time being shorter than the second time, and
wherein the cancellation of the reset signal is delayed by a third time when the storage unit stores the first value and delayed by a fourth time when the storage unit stores the second value, the third time being shorter than the fourth time.
2. A microcomputer comprising:
a central processing unit (CPU) that receives a power supply voltage;
a power-on-reset unit that sets a reset signal to reset the CPU when the power supply voltage is lower than a threshold voltage, and cancels the reset signal when the power supply voltage is equal to or higher than the threshold voltage;
a storage unit that stores a value indicating a rise time of the power supply voltage;
a delay unit; and
a counter,
wherein the storage unit stores a first value when the rise time is a first time and a second value when the rise time is a second time, the first time being shorter than the second time,
wherein cancellation of the reset signal is delayed by a third time when the storage unit stores the first value and delayed by a fourth time when the storage unit stores the second value, the third time being shorter than the fourth time, and
wherein the delay unit delays the cancellation of the reset signal by the third time, and the counter delays the cancellation of the reset signal by the fourth time.
3. The microcomputer according to claim 1 , wherein the storage unit is a flash memory.
4. The microcomputer according to claim 1 , one of the first and second values is readable when the power supply voltage is equal to or higher than the threshold voltage.
5. The microcomputer according to claim 2 , wherein the storage unit is a flash memory.
6. The microcomputer according to claim 2 , one of the first and second values is readable when the power supply voltage is equal to or higher than the threshold voltage.
7. The microcomputer according to claim 2 , wherein the delay unit is activated when the storage unit stores the first value and the counter is activated when the storage unit stores the second value.
8. The microcomputer according to claim 2 , wherein the counter starts after the power-on-reset unit detects that the power supply voltage is equal to or higher than the threshold voltage.