MEMRISTIVE DEVICES WITH LAYERED JUNCTIONS AND METHODS FOR FABRICATING THE SAME
Memristor systems and method for fabricating memristor system are disclosed. In one aspect, a memristor includes a first electrode, a second electrode, and a junction disposed between the first electrode and the second electrode. The junction includes at least one layer such that each layer has a plurality of dopant sub-layers disposed between insulating sub-layers. The sub-layers are oriented substantially parallel to the first and second electrodes.
1 - 20 . (canceled)
21 . A memristor forming a rectifier, comprising:
a first electrode;
a second electrode; and
a junction disposed between the first and second electrodes, wherein the junction includes a layer, the layer having a gradient in dopant distribution from the first electrode to the second electrode to form the rectifier.
22 . The memristor of claim 21 , wherein a region having a relatively high dopant concentration forms an Ohmic-like barrier in contact with an electrode and wherein a region having a relatively low dopant concentration forms a Schottky-like barrier in contact with an electrode.
23 . The memristor of claim 22 , wherein the region of relatively low dopant concentration in contact with the first electrode and the region of relatively high dopant concentration in contact with the second electrode form a forward rectifier.
24 . The memristor of claim 22 , wherein the region of relatively high dopant concentration in contact with the first electrode and the region of relatively low dopant concentration in contact with the second electrode form a reverse rectifier.
25 . The memristor of claim 22 , wherein a first region of relatively high dopant concentration in contact with the first electrode, a second region of relatively high dopant concentration in contact with the second electrode, and a region of relatively low dopant concentration between the two regions of relatively high dopant concentration form a shunted rectifier.
26 . The memristor of claim 22 , wherein a first region of relatively low dopant concentration in contact with the first electrode, a second region of relatively low dopant concentration in contact with the second electrode, and a region of relatively high dopant concentration between the two regions of relatively low dopant concentration form a head-to-head rectifier.
27 . The memristor of claim 21 , wherein the layer has a plurality of dopant sub-layers disposed between insulating sub-layers, with an insulating sub-layer between each pair of dopant sub-layers.
28 . The memristor of claim 27 wherein the gradient is achieved by the insulating sub-layers varying in thickness such that the dopant sub-layers in each layer are spaced closer together in a direction toward an electrode.
29 . The memristor of claim 27 , wherein each dopant sub-layer comprises mobile dopants.
30 . A memristor forming a rectifier, comprising:
a first electrode;
a second electrode; and
a junction disposed between the first and second electrodes, wherein the junction includes a layer, the layer having a gradient in dopant distribution from the first electrode to the second electrode to form the rectifier,
wherein the layer has a plurality of dopant sub-layers disposed between insulating sub-layers, with an insulating sub-layer between each pair of dopant sub-layers.
31 . The memristor of claim 30 wherein each dopant sub-layer comprises mobile dopants.
32 . The memristor of claim 30 , wherein the dopant sub-layers layers are substantially planar and substantially parallel to one another.
33 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises the insulating sub-layers varying in thickness such that the dopant sub-layers in each layer are spaced closer together toward the first electrode, each layer having a plurality of dopant sub-layers to form a forward rectifier.
34 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises the insulating sub-layers varying in thickness such that the dopant sub-layers in each layer are spaced closer together toward the second electrode, each layer having a plurality of dopant sub-layers to form a reverse rectifier.
35 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises the insulating sub-layers varying in thickness such that the dopant sub-layers are spaced closer together toward the center of each layer to form a shunted rectifier.
36 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises the insulating sub-layers varying in thickness such that the dopant sub-layers in each layer are spaced farther apart toward the center of each layer to form a head-to-head rectifier.
37 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises a Schottky-like barrier formed from dopant sub-layers within a layer of the junction located adjacent to one of the electrodes.
38 . The memristor of claim 30 , wherein the plurality of dopant sub-layers disposed between insulating sub-layers further comprises an Ohmic-like barrier formed from insulating sub-layers within a layer of the junction located adjacent to one of the electrodes.
39 . The memristor of claim 30 wherein each dopant sub-layer comprises mobile dopants.