Parasitic channel mitigation via reaction with active species
View Patent ↗III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
1. A semiconductor structure, comprising:
a substrate comprising silicon and at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 , and
wherein the peak of the sum of the concentrations of Group III species in the substrate is less than about 10 17 /cm 3 .
2. The semiconductor structure of claim 1 , wherein the at least one active species comprises oxygen, nitrogen, carbon, copper, and/or iron.
3. The semiconductor structure of claim 1 , wherein the peak of the sum of the concentrations of Al, Ga, and In in the substrate is less than about 10 17 /cm 3 .
4. The semiconductor structure of claim 1 , wherein the peak concentration of Al, Ga, and/or In in the substrate is less than about 10 17 /cm 3 .
5. The semiconductor structure of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.
6. The semiconductor structure of claim 1 , wherein the substrate is a silicon substrate.
7. The semiconductor structure of claim 6 , wherein the substrate is a bulk silicon wafer.
8. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.
9. The semiconductor structure of claim 1 , wherein the external species comprises all or part of a precursor of the III-nitride material.
10. The semiconductor structure of claim 9 , wherein the external species comprises an organic species.
11. The semiconductor structure of claim 9 , wherein the external species comprises a group III element.
12. The semiconductor structure of claim 11 , wherein the external species comprises Al, Ga, and/or In.
13. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a transistor located over the surface region of the substrate.
14. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.
15. A semiconductor structure, comprising:
a silicon-on-insulator substrate comprising at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .
16. A semiconductor structure, comprising:
a silicon carbide substrate comprising at least one active species coupled with an external species or capable of reacting with an external species; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .
17. A semiconductor structure, comprising:
a substrate comprising silicon and at least one active species coupled with an external species or capable of reacting with an external species, wherein the external species comprises a contaminant within a reactor and/or a species that forms a part of the reactor; and
a III-nitride material region located over a surface region of the substrate,
wherein the concentration of the active species is at least about 10 19 /cm 3 .