III-nitride semiconductor structures comprising spatially patterned implanted species
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
1. A semiconductor structure, comprising:
a silicon-on-insulator substrate;
a III-nitride material region located over a surface region of the substrate; and
an implanted species arranged within the surface region of the substrate in a pattern spatially defined across at least one lateral dimension of the substrate, wherein the implanted species is present within at least a portion of the surface region of the substrate at a concentration of at least about 10 19 /cm 3 .
2. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a transistor located over the substrate.
3. The semiconductor structure of claim 2 , wherein at least a portion of the substrate underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the implanted species.
4. The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a second transistor laterally spaced apart from a first transistor, wherein a portion of the surface region of the substrate between the first transistor and the second transistor has a concentration of the implanted species of at least about 10 19 /cm 3 .
5. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and the 2DEG region is substantially free of the implanted species.
6. The semiconductor structure of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.
7. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.
8. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride nucleation layer.
9. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride transition layer.
10. The semiconductor structure of claim 9 , wherein the III-nitride transition layer is compositionally graded.
11. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride buffer layer.
12. The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.
13. The semiconductor structure of claim 1 , wherein a diffusion barrier region is located between the III-nitride material region and the substrate.