III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY PATTERNED IMPLANTED SPECIES
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
1 . A semiconductor structure, comprising:
a substrate comprising silicon;
a III-nitride material region located over a surface region of the substrate;
a first implanted species arranged within the surface region of the substrate in a first pattern spatially defined across at least one lateral dimension of the substrate; and
a second implanted species arranged within the III-nitride material region in a second pattern spatially defined across at least one lateral dimension of the substrate.
2 . The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a transistor located over the substrate.
3 . The semiconductor structure of claim 2 , wherein at least a portion of the substrate underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the first implanted species.
4 . The semiconductor structure of claim 2 , wherein at least a portion of the III-nitride material region underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the second implanted species.
5 . The semiconductor structure of claim 1 , wherein the semiconductor structure comprises a second transistor located over the substrate and laterally spaced apart from the first transistor.
6 . The semiconductor structure of claim 5 , wherein a portion of the surface region of the substrate between the first transistor and the second transistor has a concentration of the first implanted species of at least about 10 19 /cm 3 .
7 . The semiconductor structure of claim 5 , wherein a portion of the III-nitride material region between the first transistor and the second transistor has a concentration of the second implanted species of at least about 10 16 /cm 3 .
8 . The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and the 2DEG region is substantially free of the first implanted species.
9 . The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and the second implanted species is present within the 2DEG region.
10 . The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a 2DEG region.
11 . The semiconductor structure of claim 10 , wherein the second implanted species forms a pattern spatially defined across at least one lateral dimension of the 2DEG region.
12 - 17 . (canceled)
18 . The semiconductor structure of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.
19 . The semiconductor structure of claim 1 , wherein the substrate is a silicon substrate.
20 . The semiconductor structure of claim 19 , wherein the substrate is a bulk silicon wafer.
21 . The semiconductor structure of claim 19 , wherein the substrate is a silicon-on-insulator substrate.
22 . The semiconductor structure of claim 1 , wherein the substrate is a silicon carbide substrate.
23 . The semiconductor structure of claim 1 , wherein the III-nitride material region comprises GaN.
24 - 27 . (canceled)
28 . The semiconductor structure of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.
29 - 31 . (canceled)