METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
1 . A method of forming a semiconductor structure, comprising:
implanting a first species and a second species into a semiconductor structure comprising a substrate comprising silicon and a III-nitride material region located over the substrate, wherein:
the first species is implanted into a surface region of the substrate such that the first species forms a pattern spatially defined across at least one lateral dimension of the substrate; and
the second species is implanted into the III-nitride material region such that the second species forms a pattern spatially defined across at least one lateral dimension of the III-nitride material region.
2 . The method of claim 1 , wherein after the first species is implanted, the first species is present within at least a portion of the surface region of the substrate at a concentration of at least about 10 19 /cm 3 .
3 . The method of claim 1 , wherein, after the second species is implanted, the second species is present within at least a portion of the III-nitride material region at a concentration of at least about 10 16 /cm 3 .
4 . The method of claim 3 , wherein, after the second species is implanted, the second species is present within at least a portion of a 2DEG region of the III-nitride material region at a concentration of at least about 10 16 /cm 3 .
5 . The method of claim 4 , wherein the semiconductor structure comprises a transistor located over the substrate.
6 . The method of claim 5 wherein, after the first species is implanted, at least a portion of the substrate underneath a channel between a source of the transistor and a drain of the transistor is substantially free of the first implanted species.
7 . The method of claim 5 , wherein, after the second species is implanted, at least a portion of the substrate underneath a channel between a source of the first transistor and a drain of the transistor is substantially free of the second implanted species.
8 . The method of claim 1 , wherein the semiconductor structure comprises a second transistor located over the substrate and laterally spaced apart from the first transistor.
9 . The method of claim 8 , wherein, after the first species is implanted, a portion of the surface region of the substrate between the first transistor and the second transistor has a concentration of the first implanted species of at least about 10 19 /cm 3 .
10 . The method of claim 8 , wherein, after the second species is implanted, a portion of the III-nitride material region between the first transistor and the second transistor has a concentration of the second implanted species of at least about 10 16 /cm 3 .
11 . The method of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and, after the first species is implanted, the 2DEG region is substantially free of the first implanted species.
12 . The method of claim 1 , wherein the III-nitride material region comprises a 2DEG region, and the second implanted species is present within the 2DEG region.
13 . The method of claim 1 , wherein during the implanting of the first species, at least a portion of the first species is implanted through the III-nitride material, region,
14 . The method of claim 1 , wherein the III-nitride material region comprises a 2DEG region.
15 . The method of claim 14 , wherein the second implanted species forms a pattern spatially defined across at least one lateral dimension of the 2DEG region.
16 - 21 . (canceled)
22 . The method of claim 1 , wherein the substrate comprises at least a layer having a resistivity of greater than about 10 2 Ohms-cm.
23 . The method of claim 1 , wherein the substrate is a silicon substrate.
24 - 25 . (canceled)
26 . The method of claim 1 , wherein the substrate is a silicon carbide substrate.
27 . The method of claim 1 , wherein the III-nitride material region comprises GaN.
28 - 31 . (canceled)
32 . The method of claim 1 , wherein the III-nitride material region comprises a III-nitride device region.
33 - 35 . (canceled)