IP Library Granted Patent US 10,738,389
Granted Patent B2
US 10,738,389 · App. 14/847,374 · Granted Aug 11, 2020

Semiconductor manufacturing apparatus

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Quick Facts
Patent No.
US 10,738,389
App. No.
14/847,374
Granted
Aug 11, 2020
Kind
B2
Abstract

A semiconductor manufacturing apparatus according to an embodiment comprises a container contains a mixed solution that includes a processing solution for plating processing of a substrate and an additive and being capable of draining a part of the mixed solution when a first condition is satisfied. A first supplier supplies the processing solution to the container. A second supplier supplies the additive to the container when the first condition is satisfied and drainage of a part of the mixed solution is finished.

Claims (16)

1. A chemical management method using a semiconductor manufacturing apparatus comprising a container containing a mixed solution that includes a processing solution for plating processing of a substrate and an additive, a first supplier supplying the processing solution to the container, and a second supplier supplying the additive to the container, the method comprising:

periodically supplying a same amount of the processing solution to the container from the first supplier in a step-wise manner such that a concentration of the additive is periodically decreased in a step-wise manner corresponding to the periodic supply of the same amount of the processing solution to the container;

calculating a calculation value of a concentration of the additive based on a drainage amount of the mixed solution, a supply amount of the processing solution from the first supplier, and a supply amount of the additive from the second supplier;

draining a part of the mixed solution from the container until a volume of the mixed solution becomes a predetermined value only after plural occurrences of a first condition and in response to the plural occurrence of the first condition, the first condition being a case that the calculation value of the concentration of the additive has fallen below a predetermined value;

supplying the additive to the container from the second supplier in response to the first condition being satisfied each time the first condition is satisfied and if draining the part of the mixed solution in response to the plural occurrences of the first condition, the supplying the additive to the container occurs after the draining the part of the mixed solution is finished; and

supplying deionized water to the container periodically, wherein

the additive includes at least one of an accelerator, a suppressor, and a leveler, and

the mixed solution includes a copper sulfate plating solution.

2. A chemical management method using a semiconductor manufacturing apparatus comprising a container containing a mixed solution that includes a processing solution for plating processing of a substrate and an additive, a first supplier supplying the processing solution to the container, and a second supplier supplying the additive to the container, the method comprising:

periodically supplying a same amount of the processing solution to the container from the first supplier in a step-wise manner such that a concentration of the additive is periodically decreased in a step-wise manner corresponding to the periodic supply of the same amount of the processing solution to the container;

measuring a concentration of the additive;

draining a part of the mixed solution from the container until a volume of the mixed solution becomes a predetermined value only after plural occurrences of a first condition and in response to the plural occurrence of the first condition, the first condition being a case that the measured concentration of the additive has fallen below a predetermined value; and

supplying the additive to the container from the second supplier in response to the first condition being satisfied each time the first condition is satisfied and if draining the part of the mixed solution in response to the plural occurrences of the first condition, the supplying the additive to the container occurs after the draining the part of the mixed solution is finished; and

supplying deionized water to the container periodically, wherein

the additive includes at least one of an accelerator, a suppressor, and a leveler, and

the mixed solution includes a copper sulfate plating solution.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043052/0218 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2015
From: IZUMI, TAKASHI; IKEGAYA, FUMITOSHI
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 036771/0943 →