Semiconductor chip and stacked semiconductor package having the same

1. A stacked semiconductor package comprising:

a plurality of semiconductor chips each including a substrate, through-electrodes passing through the substrate and a dielectric layer with a reduced dielectric constant formed between the substrate and the through-electrodes where the dielectric layer with a reduced dielectric constant has at least one air gap, and stacked such that through-electrodes of the plurality of semiconductor chips are connected with one another,

wherein the dielectric layer with a reduced dielectric constant of the lowermost semiconductor chip has a highest dielectric constant among the semiconductor chips, dielectric constants of dielectric layers with a reduced dielectric constant gradually decrease toward the uppermost semiconductor chip, and the dielectric layer with a reduced dielectric constant of the uppermost semiconductor chip has a lowest dielectric constant,

wherein the semiconductor chips includes a first semiconductor chip, a second semiconductor chip which is stacked under the first semiconductor chip, and a third semiconductor chip which is stacked under the second semiconductor chip, and

wherein the dielectric layer of the third semiconductor chip comprises a double-layered structure of a porous dielectric layer which has a plurality of air gaps therein and an air gap-free dielectric layer which has no air gap therein, the dielectric layer of the second semiconductor chip comprises a single-layered structure of a porous dielectric layer, and the dielectric layer of the first semiconductor chip comprises a single-layered structure of a hollow type dielectric layer which has an air gap defined in a center portion thereof.

2. The stacked semiconductor package according to claim 1 , wherein material comprising the porous dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, HSSQ (hydro silsesquioxane) and MSSQ (methyl silsesquioxane).

3. The stacked semiconductor package according to claim 1 , wherein the hollow type dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, polyimide, BCB and parylene.

4. The stacked semiconductor package according to claim 1 , wherein the air gap-free dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, polyimide, BCB and parylene.

5. The stacked semiconductor package according to claim 1 , further comprising:

a first dielectric layer formed under the third semiconductor chip in such a way as to leave the through-electrodes of the third semiconductor chip exposed;

redistribution lines formed under the first dielectric layer and electrically connected with the exposed through-electrodes of the third semiconductor chip; and

a second dielectric layer formed under the first dielectric layer including the redistribution lines in such a way as to leave portions of the redistribution lines exposed.

6. The stacked semiconductor package according to claim 5 , further comprising:

external connection terminals mounted to the portions of the redistribution lines which are exposed through the second dielectric layer.

7. The stacked semiconductor package according to claim 1 , further comprising:

a structural body supporting the semiconductor chips and having connection electrodes which are electrically connected with the through-electrodes of the third semiconductor chip.

8. The stacked semiconductor package according to claim 7 , wherein the structural body comprises a printed circuit board.

9. The stacked semiconductor package according to claim 7 , wherein the structural body comprises any one of an interposer and a semiconductor package.

10. A stacked semiconductor package comprising:

a plurality of semiconductor chips each including a substrate, through-electrodes passing through the substrate and a dielectric layer with a reduced dielectric constant formed between the substrate and the through-electrodes where the dielectric layer with a reduced dielectric constant has at least one air gap, and stacked such that through-electrodes of the plurality of semiconductor chips are connected with one another,

wherein a proportion of the air gap within the dielectric layer with a reduced dielectric constant of the lowermost semiconductor chip among the semiconductor chips is the lowest, proportions of the air gap within dielectric layers with a reduced dielectric constant gradually increase toward the uppermost semiconductor chip among the semiconductor chips, and a proportion of the air gap within the dielectric layer with a reduced dielectric constant of the uppermost semiconductor chip is the highest.

11. The stacked semiconductor package according to claim 10 , wherein the semiconductor chips includes a first semiconductor chip, a second semiconductor chip which is stacked under the first semiconductor chip, and a third semiconductor chip which is stacked under the second semiconductor chip, and

wherein the dielectric layer of the third semiconductor chip comprises a double-layered structure of a porous dielectric layer which has a plurality of air gaps therein and an air gap-free dielectric layer which has no air gap therein, the dielectric layer of the second semiconductor chip comprises a single-layered structure of a porous dielectric layer, and the dielectric layer of the first semiconductor chip comprises a single-layered structure of a hollow type dielectric layer which has an air gap defined in a center portion thereof.

12. The stacked semiconductor package according to claim 11 , wherein material comprising the porous dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, HSSQ (hydro silsesquioxane) and MSSQ (methyl silsesquioxane).

13. The stacked semiconductor package according to claim 11 , wherein the hollow type dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, polyimide, BCB and parylene.

14. The stacked semiconductor package according to claim 11 , wherein the air gap-free dielectric layer includes any one selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, polyimide, BCB and parylene.

15. The stacked semiconductor package according to claim 11 , further comprising:

a first dielectric layer formed under the third semiconductor chip in such a way as to leave the through-electrodes of the third semiconductor chip exposed;

redistribution lines formed under the first dielectric layer and electrically connected with the exposed through-electrodes of the third semiconductor chip; and

a second dielectric layer formed under the first dielectric layer including the redistribution lines in such a way as to leave portions of the redistribution lines exposed.

16. The stacked semiconductor package according to claim 15 , further comprising:

external connection terminals mounted to the portions of the redistribution lines which are exposed through the second dielectric layer.

17. The stacked semiconductor package according to claim 11 , further comprising:

a structural body supporting the semiconductor chips and having connection electrodes which are electrically connected with the through-electrodes of the third semiconductor chip.

18. The stacked semiconductor package according to claim 17 , wherein the structural body comprises a printed circuit board.

19. The stacked semiconductor package according to claim 17 , wherein the structural body comprises any one of an interposer and a semiconductor package.