IP Library › Granted Patent US 9,385,272
Granted Patent B2
US 9,385,272 · App. 14/852,212 · Granted Jul 5, 2016

Optoelectronic device and the manufacturing method thereof

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Quick Facts
Patent No.
US 9,385,272
App. No.
14/852,212
Granted
Jul 5, 2016
Kind
B2
Abstract

An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*10 16 cm −3 .

Claims (19)

1. An optoelectronic device, comprising:

an optoelectronic system for emitting a light; and

a semiconductor layer on the optoelectronic system;

wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*10 16 cm −3 .

2. The optoelectronic device according to claim 1 , wherein an atomic concentration of Ag in the semiconductor layer is smaller than 1*10 19 cm −3 .

3. The optoelectronic device according to claim 1 , wherein the semiconductor layer comprises an impurity such that the semiconductor layer has a conductivity-type.

4. The optoelectronic device according to claim 3 , wherein the conductivity-type is p-type.

5. The optoelectronic device according to claim 1 , further comprising a reflecting layer on the semiconductor layer.

6. The optoelectronic device according to claim 5 , wherein the reflecting layer comprises the metal element.

7. The optoelectronic device according to claim 5 , wherein a thickness of the reflecting layer is between 0.1 μm and 1 μm.

8. The optoelectronic device according to claim 5 , further comprising a first transparent layer between the semiconductor layer and the reflecting layer.

9. The optoelectronic device according to claim 8 , wherein the first transparent layer comprises indium tin oxide (ITO), cadmium tin oxide (CTO), antimony tin oxide, indium zinc oxide (IZO), zinc aluminum oxide (AZO) or zinc tin oxide.

10. The optoelectronic device according to claim 8 , wherein a thickness of the first transparent layer is between 0.005 μm and 0.6 μm.

11. The optoelectronic device according to claim 8 , further comprising an ohmic contact layer between the semiconductor layer and the first transparent layer for electrically connecting the semiconductor layer and the first transparent layer.

12. The optoelectronic device according to claim 11 , wherein the ohmic contact layer comprises GeAu or BeAu.

13. The optoelectronic device according to claim 1 , further comprising a window layer on a side of the optoelectronic system opposite to the semiconductor layer.

14. The optoelectronic device according to claim 13 , wherein a surface of the window layer is roughened.

15. The optoelectronic device according to claim 1 , further comprising a first pad on the optoelectronic system and a finger extending from the first pad toward borders of the optoelectronic system.

16. The optoelectronic device according to claim 1 , further comprising a second pad on the semiconductor layer.

Assignments (1)
CHANGE OF NAME Recorded Apr 22, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075513/0783 →