Polycrystalline diamond compacts, related products, and methods of manufacture
View Patent ↗Embodiments relate to polycrystalline diamond compacts (“PDCs”) and methods of manufacturing such PDCs in which an at least partially leached polycrystalline diamond (“PCD”) table is infiltrated with a low viscosity cobalt-based alloy infiltrant.
1. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein;
at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table;
subjecting the at least partially leached polycrystalline diamond table and a substrate to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant; and
wherein the at least partially infiltrated polycrystalline diamond table includes a first region adjacent to the substrate that includes the cobalt-boron-silicon alloy infiltrant disposed in at least a portion of the interstitial regions thereof, and a second region extending inwardly from an exterior surface that is substantially free of the cobalt-boron-silicon alloy infiltrant.
2. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant has a composition that is at or near a eutectic composition.
3. The method of claim 2 wherein one or more of silicon or boron from the cobalt-boron-silicon alloy infiltrant is present in a hypo-eutectic amount or a hyper-eutectic amount.
4. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant includes greater than 0% to about 6% silicon by weight, greater than 0% to about 6% boron by weight, and the balance being cobalt.
5. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant includes greater than 0% to about 5% silicon by weight, greater than 0% to about 4% boron by weight, and the balance being cobalt.
6. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant includes greater than 0% to about 4% silicon by weight, greater than 0% to about 3% boron by weight, and the balance being cobalt.
7. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant includes nickel.
8. The method of claim 1 , further comprising leaching a portion of the cobalt-boron-silicon alloy infiltrant from the at least partially infiltrated polycrystalline diamond table to form the second region.
9. The method of claim 1 wherein infiltration of the cobalt-boron-silicon alloy infiltrant is only partially complete, so as to form the second region.
10. The method of claim 1 wherein the second region includes a second infiltrant therein, the second infiltrant including one or more of copper, tin, germanium, gadolinium, magnesium, lithium, silicon, silver, zinc, gallium, antimony, bismuth, alloys of any of the foregoing, or combinations of any of the foregoing.
11. The method of claim 1 wherein the cobalt-boron-silicon alloy infiltrant is provided from the substrate.
12. The method of claim 1 further comprising providing the cobalt-boron-silicon alloy infiltrant from an alloy source disposed between the at least partially leached polycrystalline diamond table and the substrate.
13. The method of claim 12 wherein the cobalt-boron-silicon alloy source includes one or more of a foil, a disc, a powder, or a paste.
14. A method of fabricating a rotary drill bit that includes a polycrystalline diamond compact, the method comprising:
receiving a polycrystalline diamond compact formed by a method including:
forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein;
at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table, the polycrystalline diamond table having a first thickness;
subjecting the at least partially leached polycrystalline diamond table and a substrate having a second thickness to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant, the second thickness of the substrate being greater than the first thickness of the at least partially leached polycrystalline diamond table; and
affixing the polycrystalline diamond compact to a bit body, the polycrystalline diamond compact including the at least partially infiltrated polycrystalline diamond table and the substrate.
15. The method of claim 14 wherein the cobalt-boron-silicon alloy infiltrant has a composition that is at or near a eutectic composition.
16. The method of claim 15 wherein one or more of silicon or boron from the cobalt-boron-silicon alloy infiltrant is present in a hypo-eutectic amount or a hyper-eutectic amount.
17. A method of fabricating a polycrystalline diamond compact, comprising:
forming a polycrystalline diamond table in the presence of a metal-solvent catalyst in a first high-pressure/high-temperature process, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, at least a portion of the plurality of interstitial regions including the metal-solvent catalyst disposed therein;
at least partially leaching the polycrystalline diamond table to remove at least a portion of the metal-solvent catalyst therefrom to form an at least partially leached polycrystalline diamond table;
subjecting the at least partially leached polycrystalline diamond table and a substrate to a second high-pressure/high-temperature process under diamond-stable temperature-pressure conditions effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with an alloy infiltrant comprising a cobalt-boron-silicon alloy infiltrant; and
wherein:
infiltration of the cobalt-boron-silicon alloy infiltrant is only partially complete so that the polycrystalline diamond table includes a first region adjacent to the substrate that includes the cobalt-boron-silicon alloy infiltrant disposed in at least a portion of the interstitial regions thereof, and a second region extending inwardly from an exterior surface that is substantially free of the cobalt-boron-silicon alloy infiltrant; and
the second region includes a second infiltrant, the second infiltrant including one or more of copper, tin, germanium, gadolinium, magnesium, lithium, silicon, silver, zinc, gallium, antimony, bismuth, alloys of any of the foregoing, or combinations of any of the foregoing.
18. The method of claim 17 wherein the cobalt-boron-silicon alloy infiltrant includes greater than 0% to about 6% silicon by weight, greater than 0% to about 6% boron by weight, and the balance being cobalt.
19. The method of claim 17 wherein the cobalt-boron-silicon alloy infiltrant includes nickel.