Semiconductor device and method of manufacture
View Patent ↗A device comprising a semiconductor device, a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.
1. A device comprising:
a semiconductor device with an encapsulant;
a via extending through the encapsulant and laterally separated from the semiconductor device;
a protective layer over the encapsulant and the via;
a marking within the protective layer, the marking comprising a cross-free character, wherein the marking comprises at least one laser pulse exposure region.
2. The semiconductor device of claim 1 , wherein the marking comprises a plurality of overlapping laser pulse exposure regions.
3. The semiconductor device of claim 1 , wherein a first one of the plurality of laser pulse exposure regions has an overlap percentage of less than 400%, wherein the first one of the plurality of laser pulse exposure regions has a first multiple of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a first side and a second multiple of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a second side different from the first side.
4. The semiconductor device of claim 1 , wherein the marking is directly over a portion of the encapsulant between the semiconductor device and the via.
5. The semiconductor device of claim 4 , wherein the marking does not extend over either the semiconductor device or the via.
6. The semiconductor device of claim 1 , wherein the marking comprises an alphanumeric character.
7. The semiconductor device of claim 6 , wherein the marking comprising the letter “Q”.
8. A semiconductor device comprising:
a semiconductor die;
a conductive via laterally separated from the semiconductor die;
an encapsulant located between the semiconductor die and the conductive via;
a protective material over the encapsulant; and
a marking character within the protective material, wherein the marking character has an overlap count of less than two.
9. The semiconductor device of claim 8 , wherein the marking character has an overlap count of less than one.
10. The semiconductor device of claim 8 , wherein the marking character comprises a plurality of laser pulse exposure regions, and wherein a first one of the plurality of laser pulse exposure regions has an overlap percentage of less than 752%, the first one of the plurality of laser pulse exposure regions has a first plurality of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a first side and a second plurality of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a second side different from the first side.
11. The semiconductor device of claim 8 , wherein the marking character comprises a plurality of laser pulse exposure regions, and wherein a first one of the plurality of laser pulse exposure regions has an overlap percentage of less than 400%, the first one of the plurality of laser pulse exposure regions has a first plurality of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a first side and a second plurality of overlapping laser pulse exposure regions overlapping the first one of the plurality of laser pulse exposure regions on a second side different from the first side.
12. The semiconductor device of claim 8 , further comprising a redistribution layer formed in electrical connection with the conductive via.
13. The semiconductor device of claim 8 , wherein the marking character is an alphanumeric character.
14. The semiconductor device of claim 8 , wherein the marking character is located directly over the encapsulant and does not extend over the semiconductor die or the conductive via.
15. A semiconductor device comprising:
a semiconductor die laterally separated from a conductive via;
an encapsulant encapsulating both the semiconductor die and the conductive via;
a layer of material over the semiconductor die, the encapsulant, and the conductive via;
a character marked into the layer of material, wherein the character comprises a plurality of laser pulse exposure regions, each of the laser pulse exposure regions having a diameter of less than about 100 μm and each of which is aligned along a circular trace path, the circular trace path outlining the character.
16. The semiconductor device of claim 15 , wherein the plurality of laser pulse exposure regions forms a line with a width of greater than about 50 μm.
17. The semiconductor device of claim 15 , wherein the character is an alphanumeric character.
18. The semiconductor device of claim 15 , further comprising a redistribution layer in electrical connection with the conductive via.
19. The semiconductor device of claim 15 , wherein the character has a depth into the layer of material of between about 5 μm and about 18 μm.
20. The semiconductor device of claim 15 , wherein the encapsulant has a first top surface and the via has a second top surface, wherein the first top surface is planar with the second top surface.