IP Library Granted Patent US 9,717,148
Granted Patent B2
US 9,717,148 · App. 14/859,026 · Granted Jul 25, 2017

Methods of forming a microelectronic device structure, and related microelectronic device structures and microelectronic devices

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Quick Facts
Patent No.
US 9,717,148
App. No.
14/859,026
Granted
Jul 25, 2017
Kind
B2
Abstract

A method of forming a microelectronic device structure comprises coiling a portion of a wire up and around at least one sidewall of a structure protruding from a substrate. At least one interface between an upper region of the structure and an upper region of the coiled portion of the wire is welded to form a fused region between the structure and the wire.

Claims (16)

1. A microelectronic device structure, comprising:

a structure protruding from a surface of another structure, and comprising:

a proximal region adjacent an interface between the structure and the surface of the another structure; and

a distal region opposing the proximal region;

a wire coiled around at least one sidewall of the structure; and

a fused region integral and continuous with the distal region of the structure and a terminal end of the wire.

2. The microelectronic device structure of claim 1 , wherein the wire comprises a single, solid, substantially homogeneous metal structure.

3. The microelectronic device structure of claim 2 , wherein the wire further comprises an insulative sheath physically contacting and surrounding a periphery of the single, solid, substantially homogeneous metal structure.

4. The microelectronic device structure of claim 1 , wherein the structure comprises a nickel-cobalt ferrous alloy, the wire comprises substantially pure nickel, and the fused region comprises nickel, cobalt, and iron.

5. The microelectronic device structure of claim 1 , wherein the fused region is substantially homogeneous.

6. The microelectronic device structure of claim 1 , wherein the fused region exhibits a non-planar surface and extends outwardly beyond lateral boundaries of at least one sidewall of the structure.

7. A microelectronic device, comprising:

a microelectronic device structure comprising:

at least one structure longitudinally projecting from a surface of another structure; and

at least one wire coupled to the at least one structure, a portion of the at least one wire coiled up and around the at least one structure and attached to the at least one structure through at least one fused region integral and continuous with the at least one structure and the at least one wire.

8. The microelectronic device of claim 7 , wherein the at least one wire comprises only one solid, substantially homogeneous, annealed metal structure.

Assignments (10)
RELEASE OF SECURITY INTEREST IN PATENTS Recorded Jul 17, 2025
From: JPMORGAN CHASE BANK, N.A.
To: CHAMPIONX LLC; APERGY ESP SYSTEMS, LLC; APERGY BMCS ACQUISITION CORP; HARBISON-FISCHER, INC.; NORRIS RODS, INC.,; NORRIS RODS, INC.,; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; US SYNTHETIC CORPORATION
Reel/Frame 072004/0019 →
MERGER Recorded Dec 20, 2023
From: QUARTZDYNE, INC.
To: CHAMPIONX LLC
Reel/Frame 065925/0979 →
RELEASE OF SECURITY INTEREST Recorded Jun 7, 2022
From: BANK OF AMERICA, N.A.
To: ACE DOWNHOLE, LLC; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; APERGY BMCS ACQUISITION CORP.; NORRISEAL-WELLMARK, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
Reel/Frame 060305/0001 →
SECURITY INTEREST Recorded Jun 5, 2020
From: ACE DOWNHOLE, LLC; APERGY BMCS ACQUISITION CORP.; HARBISON-FISCHER, INC.; NORRIS RODS, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; THETA OILFIELD SERVICES, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: BANK OF AMERICA, N.A.
Reel/Frame 053790/0001 →
SECURITY AGREEMENT Recorded May 9, 2018
From: APERGY (DELAWARE) FORMATION, INC.; APERGY BMCS ACQUISITION CORP.; APERGY ENERGY AUTOMATION, LLC; HARBISON-FISCHER, INC.; NORRISEAL-WELLMARK, INC.; PCS FERGUSON, INC.; QUARTZDYNE, INC.; SPIRIT GLOBAL ENERGY SOLUTIONS, INC.; US SYNTHETIC CORPORATION; WINDROCK, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 046117/0015 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2016
From: CLOVE PARK INSURANCE COMPANY
To: CP FORMATION LLC
Reel/Frame 037833/0135 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2016
From: CP FORMATION LLC
To: QUARTZDYNE, INC.
Reel/Frame 037833/0162 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED ON REEL 037482 FRAME 0033. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Feb 25, 2016
From: DELAWARE CAPITAL FORMATION, INC.
To: CLOVE PARK INSURANCE COMPANY
Reel/Frame 037927/0335 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 13, 2016
From: DELAWARE CAPITAL FORMATION, INC.
To: CLOVE PARK INSURANCE COMPANY
Reel/Frame 037482/0033 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 21, 2015
From: HAHN, MARK
To: DELAWARE CAPITAL FORMATION, INC.
Reel/Frame 036610/0708 →