Semiconductor device comprising an insulating layer including a void
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
1. A semiconductor device comprising:
an oxide semiconductor film;
a first insulating film covering the oxide semiconductor film; and
a second insulating film covering the first insulating film,
wherein, when seen in a cross-sectional view, a lateral extension of the oxide semiconductor film is comprised within a lateral extension of the first insulating film and within a lateral extension of the second insulating film,
wherein the first insulating film comprises steps with concave edges and convex edges,
wherein the first insulating film comprises a void portion within external boundaries of the first insulating film, the void portion being localized in a vicinity of one of the concave edges and the convex edges, and
wherein the second insulating film covers the void portion of the first insulating film.
2. The semiconductor device according to claim 1 ,
wherein the void portion is localized in a vicinity of one of the convex edges of the first insulating film.
3. The semiconductor device according to claim 1 ,
wherein the steps are due to an end portion of a layer located under the first insulating film.
4. The semiconductor device according to claim 1 ,
wherein the steps are due to end portions of a layer located under the first insulating film, and
wherein the layer located under the first insulating film is a conductive layer.
5. The semiconductor device according to claim 1 ,
wherein the first insulating film comprises silicon and oxygen, and
wherein the second insulating film comprises silicon and nitrogen.
6. The semiconductor device according to claim 1 ,
wherein the first insulating film comprises silicon and more oxygen than nitrogen, and
wherein the second insulating film comprises silicon and more nitrogen than oxygen.
7. The semiconductor device according to claim 1 ,
wherein the first insulating film is a silicon oxynitride film, and
wherein the second insulating film is a silicon nitride film.
8. The semiconductor device according to claim 1 ,
wherein the first insulating film is a silicon oxide film, and
wherein the second insulating film is a silicon nitride film.
9. The semiconductor device according to claim 1 ,
wherein the first insulating film has a thickness larger than the second insulating film.
10. The semiconductor device according to claim 1 ,
wherein the first insulating film has a density higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
11. A display device comprising the semiconductor device according to claim 1 .
12. A semiconductor device comprising:
an oxide semiconductor film;
a first insulating film over the oxide semiconductor film; and
a second insulating film over the first insulating film,
wherein a portion of the first insulating film comprises a void portion,
wherein the second insulating film overlaps with the portion of the first insulating film, and
wherein the first insulating film comprises a stack of a first oxide insulating film and a second oxide insulating film.
13. The semiconductor device according to claim 12 ,
wherein the portion is adjacent to a step of the first insulating film.
14. The semiconductor device according to claim 12 ,
wherein the portion is adjacent to with a step of the first insulating film, the step being due to an end portion of a layer located under the first insulating film.
15. The semiconductor device according to claim 12 ,
wherein the portion is adjacent to a step of the first insulating film, the step being due to an end portion of a layer located under the first insulating film, and
wherein the layer located under the first insulating film is a conductive layer.
16. The semiconductor device according to claim 12 ,
wherein each of the first oxide insulating film and the second oxide insulating film comprises silicon and oxygen, and
wherein the second insulating film comprises silicon and nitrogen.
17. The semiconductor device according to claim 12 ,
wherein the first oxide insulating film and the second oxide insulating film are silicon oxynitride films, and
wherein the second insulating film is a silicon nitride film.
18. The semiconductor device according to claim 12 ,
wherein the second oxide insulating film is interposed between the first oxide insulating film and the second insulating film,
wherein the second oxide insulating film has a thickness larger than the first oxide insulating film, and
wherein the first insulating film has a thickness larger than the second insulating film.
19. The semiconductor device according to claim 12 ,
wherein the first insulating film has a density higher than or equal to 2.26 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
20. The semiconductor device according to claim 12 ,
wherein the second oxide insulating film is denser than the first oxide insulating film.
21. A display device comprising the semiconductor device according to claim 12 .
22. A semiconductor device comprising:
an oxide semiconductor film;
a first insulating film over the oxide semiconductor film; and
a second insulating film over the first insulating film,
wherein a portion of the first insulating film comprises a void portion within external boundaries of the first insulating film, and
wherein the second insulating film overlaps with the portion of the first insulating film and covers the void portion,
wherein the portion is adjacent to a step of the first insulating film, the step being due to an end portion of a layer located under the first insulating film,
wherein the layer located under the first insulating film is a conductive layer,
wherein the first insulating film comprises silicon and more oxygen than nitrogen, and
wherein the second insulating film comprises silicon and more nitrogen than oxygen.
23. The semiconductor device according to claim 22 ,
wherein the first insulating film has a thickness larger than the second insulating film.
24. The semiconductor device according to claim 22 ,
wherein the first insulating film has a density higher than or equal to 226 g/cm 3 and lower than or equal to 2.50 g/cm 3 .
25. The semiconductor device according to claim 1 ,
wherein the void portion is generated as a structural defect within the first insulating film.
26. The semiconductor device according to claim 12 ,
wherein the void portion is generated as a structural defect within the first insulating film.
27. The semiconductor device according to claim 22 ,
wherein the void portion is generated as a structural defect within the first insulating film.