Patterned material layer and patterning method
A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.
1. A patterned material layer, comprising:
a plurality of separate patterns arranged in rows and columns, wherein the separate patterns in at least one row including an outmost row each have a larger dimension in a column direction than the separate patterns in other rows, and the separate patterns in at least one column including an outmost column each have a larger dimension in a row direction than the separate patterns in other columns,
wherein the patterned material layer exists in an integrated circuit, the patterned material layer is a wafer layer, and a pitch of the separate patterns is sub-micron.
2. The patterned material layer of claim 1 , which includes a layer defined by a patterned mask layer through etching.
3. The patterned material layer of claim 2 , wherein the separate patterns comprise contact hole patterns.
4. The patterned material layer of claim 2 , wherein the separate patterns comprise pillar patterns.
5. The patterned material layer of claim 1 , wherein only the separate patterns in the outmost row each have the larger dimension in the column direction than the separate patterns in the other rows, and only the separate patterns in the outmost column each have the larger dimension in the row direction than the separate patterns in the other columns.
6. The patterned material layer of claim 5 , wherein
a first spacing between the outmost row of separate patterns and a neighboring row of separate patterns among the other rows is equal to a second spacing between any two of the other rows of separate patterns, and
a third spacing between the outmost column of separate patterns and a neighboring column of separate patterns among the other columns is equal to a fourth spacing between any two of the other columns of separate patterns.
7. The patterned material layer of claim 5 , wherein
a first spacing between the outmost row of separate patterns and a neighboring row of separate patterns among the other rows is smaller than a second spacing between any two of the other rows of separate patterns, and
a third spacing between the outmost column of separate patterns and a neighboring column of separate patterns among the other columns is smaller than a fourth spacing between any two of the other columns of separate patterns.
8. The patterned material layer of claim 5 , wherein
a first spacing between the outmost row of separate patterns and a neighboring row of separate patterns among the other rows is larger than a second spacing between any two of the other rows of separate patterns, and
a third spacing between the outmost column of separate patterns and a neighboring column of separate patterns among the other columns is larger than a fourth spacing between any two of the other columns of separate patterns.
9. The patterned material layer of claim 1 , wherein
only the separate patterns in the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows,
the separate patterns in n (n≥2) columns including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns, wherein indexing of 1 to n starts from the outmost column,
a spacing S i (i=1 to n−1) between the i-th column of separate patterns and the (i+1)-th column of separate patterns is larger than or equal to a spacing S i+1 between the (i+1)-th column of separate patterns and the (i+2)-th column of separate patterns, and a spacing S n between the n-th column of separate patterns and an inner neighboring column of separate patterns among the other columns is larger than a spacing between any two of the other columns, and
a row-direction dimension D i (i=1 to n−1) of the separate patterns in the i-th column is larger than or equal to a row-direction dimension D i+1 of the separate patterns in the (i+1)-th column, and a row-direction dimension D n of the separate patterns in the n-th column is larger than a row-direction dimension of the separate patterns in the other columns.
10. The patterned material layer of claim 9 , wherein S i (i=1 to n−1) is larger than S i+1 and/or D i (i=1 to n−1) is larger than D i+1 .
11. The patterned material layer of claim 9 , wherein the separate patterns in each column of separate patterns are arranged in a staggered manner.
12. The patterned material layer of claim 11 , wherein S i (i=1 to n−1) is larger than S i+1 and/or D i (i=1 to n−1) is larger than D i+1 .