Graphite susceptor
Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.
1. A substrate support, comprising:
a support member for vacuum chucking a substrate comprising a thermal conduit and a rim; and
an oriented graphite plate disposed on the support member, wherein the oriented graphite plate comprises a plurality of layers of graphite and has:
(a) a thickness of about 1 mm to about 10 mm,
(b) a thermal conductivity along the graphite layers that is at least 100 times the thermal conductivity across the layers, and
(c) an oriented graphite plate diameter substantially similar to a diameter of the rim.
2. The substrate support of claim 1 , wherein the oriented graphite plate has a substrate contact surface.
3. The substrate support of claim 1 , wherein the oriented graphite plate is disposed within an outside member.
4. The substrate support of claim 1 , wherein the support member is a susceptor.
5. The substrate support of claim 3 , wherein the outside member encapsulates the oriented graphite plate.
6. The substrate support of claim 3 , wherein the outside member is resistant to chemical attack.
7. The substrate support of claim 1 , wherein the support member comprises a center conduit and an edge thermal conduit.
8. The substrate support of claim 1 , wherein the support member is solid between the center thermal conduit and the edge thermal conduit.
9. A substrate support, comprising:
a support member for vacuum chucking a substrate comprising a thermal conduit and a rim; and
a substrate support surface disposed on the support member, the substrate support surface comprising an oriented graphite plate disposed within an outer member, wherein the oriented graphite plate comprises a plurality of layers of graphite and has:
(a) a thickness of about 1 mm to about 10 mm,
(b) a thermal conductivity along the graphite layers that is at least 100 times the thermal conductivity across the layers, and
(c) an oriented graphite plate diameter substantially similar to a diameter of the rim.
10. The substrate support of claim 9 , wherein the support member is a susceptor.
11. The substrate support of claim 9 , wherein the support member is a heater.
12. The substrate support of claim 9 , wherein the outer member encapsulates the oriented graphite plate.
13. The substrate support of claim 9 , wherein the outer member is a coating on the oriented graphite plate.
14. The substrate support of claim 12 , wherein the outer member is ceramic.
15. A substrate support, comprising:
a susceptor comprising a support member for vacuum chucking a substrate, the support member comprising a thermal conduit and a rim; and
an oriented graphite plate disposed in a recess in contact with the susceptor, wherein the oriented graphite plate comprises a plurality of layers of graphite and has:
(a) a thickness between about 1 mm and about 10 mm,
(b) a thermal conductivity along the graphite layers that is at least 100 times the thermal conductivity across the layers,
(c) an oriented graphite plate diameter substantially similar to a diameter of the rim, and
(d) a substrate contact surface.
16. The substrate support of claim 15 , wherein the support member comprises silicon carbide.
17. The substrate support of claim 16 , wherein the support member comprises quartz.