IP Library Granted Patent US 11,014,819
Granted Patent B2
US 11,014,819 · App. 14/864,196 · Granted May 25, 2021

Methods of providing high purity SiOC and SiC materials

Inventors: Douglas M. Dukes (Troy, NY); Ashish P. Diwanji (New Albany, OH); Andrew R. Hopkins (Sylvania, OH); Walter J. Sherwood (Glenville, NY); Glenn Sandgren (Ambler, PA); Mark S. Land (Houston, TX); Brian L. Benac (Hadley, NY)
Assignee: Pallidus, Inc.
C01B32/907C04B35/515C04B35/56C04B35/5603C04B35/571C04B35/64C04B35/806C08G77/20C08G77/50C08L83/04C04B2235/3418C04B2235/3826C04B2235/44C04B2235/48C04B2235/483C04B2235/528C04B2235/5427C04B2235/5436C04B2235/6581C04B2235/72C04B2235/77C04B2235/96C08G77/12C08G77/80C09K8/80
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,014,819
App. No.
14/864,196
Granted
May 25, 2021
Kind
B2
Abstract

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Claims (62)

1. A method of making a high purity silicon oxycarbide, the method comprising:

a. a step for purifying a liquid comprising silicon, carbon and oxygen to provide a purified liquid consisting essentially of silicon, carbon and oxygen; and,

b. curing the purified liquid to a cured material;

c. wherein the cured material is at least 99.999% pure silicon oxycarbide.

2. The method of claim 1 , wherein the liquid is a polysilocarb precursor formulation.

3. The method of claim 1 , wherein the liquid is a polysilocarb precursor formulation having a molar ratio of about 30% to 85% carbon, about 5% to 40% oxygen, and about 5% to 35% silicon.

4. The method of claim 1 , wherein the liquid is a polysilocarb precursor formulation having a molar ratio of about 50% to 65% carbon, about 20% to 30% oxygen, and about 15% to 20% silicon.

5. The method of claim 1 , wherein the cured material is at least 99.9999% pure.

6. The method of claim 1 , wherein the cured material has less than 10 ppm Al.

7. The method of claim 1 , wherein the cured material has less than about 1 ppm Al.

8. The method of claim 1 , wherein the cured material has less than 10 ppm B.

9. The method of claim 1 , wherein the cured material has less than 10 ppm total of elements selected from the group consisting of Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S and As.

10. The method of claim 1 , wherein the cured material has less than about 1 ppm total of elements selected from the group consisting of Al, Fe, B, P, Pt, Ca, Mg, Li, Na, Ni, V, Ti, Ce, Cr, S and As.

11. The method of claim 1 , wherein the cured material has less than 10 ppm total of elements selected from the group consisting of Al, Ti, Fe, B, and P.

12. The method of claim 1 , wherein the cured material has less than about 1 ppm total of elements selected from the group consisting of Al, Ti, Fe, B, and P.

13. The method of claim 1 , wherein off-gasses are generated, collected and handled.

14. The method of claim 13 , wherein off-gasses handling comprises a process selected from the group consisting of burning the off-gasses in an afterburner, recovering a starting material from the off-gasses, and scrubbing the off-gasses.

15. A method of making silicon oxycarbide, the method comprising:

a. distilling a liquid comprising silicon, oxygen and carbon; wherein the distilled liquid is substantially free of impurities;

b. curing the distilled liquid to a cured material, comprising silicon, carbon and oxygen, wherein the cured material is substantially free of impurities; and,

c. pyrolizing the cured material to a solid material consisting essentially of silicon, carbon and oxygen.

16. The method of claim 15 , wherein the distilled liquid is combined with a second liquid.

17. The method of claim 15 , wherein the distilled liquid is combined with a polysilocarb precursor.

18. The method of claim 15 , wherein the molar ratio of silicon to carbon to oxygen in the cured material is 25 mol % Si, 50 mol % C and 25 mol % O, based on based on total moles of the Si, the C and the O.

19. The method of claim 15 , wherein the molar ratio of silicon to carbon to oxygen in the cured material is 20 mol % Si, 60 mol % C and 25 mol % O, based on based on total moles of the Si, the C and the O.

20. The method of claim 19 , wherein off-gasses are generated, collected and handled.

21. The method of claim 15 , wherein the molar ratio of silicon to carbon to oxygen in the cured material is 23 mol % Si, 54 mol % C and 23 mol % O, based on based on total moles of the Si, the C and the O.

22. The method of claim 15 , wherein the molar ratio of silicon to carbon to oxygen in the cured material is 22 mol % Si, 56 mol % C and 22 mol % O, based on based on total moles of the Si, the C and the O.

23. The method of claim 15 , wherein molar ratio of silicon to carbon to oxygen in the cured material is about 1.37 Si, about 2.73 C and about 1.37 0.

24. The method of claim 15 , wherein the pyrolized material is at least 99.99% pure.

25. The method of claim 15 , wherein the pyrolized material is at least 99.999% pure.

26. The method of claim 15 , wherein the pyrolized material is at least 99.9999% pure.

27. The method of claim 15 , wherein off-gasses are generated, collected and handled.

28. A method of making silicon oxycarbide, the method comprising:

a. a step for purifying a liquid comprising silicon, oxygen and carbon to provide a purified liquid that is substantially free of impurities; and,

b. curing the purified liquid to a cured material, comprising silicon, carbon and oxygen, wherein the cured material is substantially free of impurities.

29. The method of claim 28 , wherein the distilled liquid is at least 4-nines pure.

30. The method of claim 28 , wherein the cured material is at least 4-nines pure.

31. The method of claim 28 , wherein the distilled liquid is at least 4-nines pure and the cured material is at least 4-nines pure.

32. The method of claim 28 , wherein the distilled liquid is at least 5-nines pure.

33. The method of claim 28 , wherein the cured material is at least 5-nines pure.

34. The method of claim 28 , wherein the distilled liquid is at least 5-nines pure and the cured material is at least 4-nines pure.

35. A method of making a high purity material, the method comprising:

a. providing a liquid comprising silicon, oxygen and carbon;

b. distilling the liquid to provide a purified liquid consisting essentially of silicon, carbon and oxygen;

c. curing the purified liquid to a cured material comprising silicon, carbon and oxygen; and,

d. pyrolizing the liquid to a ceramic material consisting essentially of silicon, carbon and oxygen.

36. The method of claim 35 , wherein off-gasses are generated, collected and handled.

37. A method of making a high purity material, the method comprising:

a. providing a liquid comprising silicon, oxygen and carbon;

b. purifying the liquid to provide a purified liquid consisting essentially of silicon, carbon and oxygen liquid; and,

c. curing the purified liquid to a cured material consisting essentially of silicon, carbon and oxygen.

38. A method of making high purity silicon oxycarbide, the method comprising:

a. a step for purifying a liquid comprising silicon, carbon and oxygen to provide a purified liquid consisting essentially of silicon, carbon and oxygen; and,

b. transforming the purified liquid to a solid material consisting essentially of silicon, oxygen and carbon.

39. A method of making silicon oxycarbide, the method comprising:

a. providing a material comprising an amount of silicon, carbon and oxygen, the material being liquid;

b. distilling the liquid to provide a distilled liquid that is substantially free from impurities;

c. transforming the material by performing a first segment and a second segment;

d. wherein the first segment comprises providing a cured material comprising O, Si and C, and the second segment comprises providing a ceramic material comprising O, Si, and C; and,

e. whereby, the ceramic material is at least about 99.99% pure.

40. The method of claim 39 , wherein off-gasses are generated, collected and handled.

Assignments (3)
SECURITY INTEREST Recorded Jan 10, 2025
From: PALLIDUS, INC.
To: R&R PALLIDUS HOLDINGS II LLC, AS ADMINISTRATIVE AGENT
Reel/Frame 069818/0486 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 1, 2018
From: MELIOR INNOVATIONS, INC.
To: PALLIDUS, INC.
Reel/Frame 045685/0773 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 29, 2016
From: DUKES, DOUGLAS M.; DIWANJI, ASHISH P.; HOPKINS, ANDREW R.; SHERWOOD, WALTER R.; SANDGREN, GLENN; LAND, MARK S.; BENAC, BRIAN L.
To: MELIOR INNOVATIONS, INC.
Reel/Frame 037855/0618 →
Continuity (11)
Continuation In Part 14634814 · Feb 28, 2015
Continuation In Part 14268150 · May 2, 2014
Continuation In Part 14212896 · Mar 14, 2014
Provisional Application 62112025 · Feb 4, 2015
Provisional Application 62055497 · Sep 25, 2014
Provisional Application 62055397 · Sep 25, 2014
Provisional Application 62055461 · Sep 25, 2014
Provisional Application 61946598 · Feb 28, 2014
Provisional Application 61818981 · May 3, 2013
Provisional Application 61818906 · May 2, 2013
Related Publication 20160207780A1 · Jul 21, 2016