Photodetector with integrated temperature control element formed at least in part in a semiconductor layer
A temperature-controlled photodetector sub-system is described. The temperature control element allows the operation of the photodetector at a desired temperature. The temperature control element can be a heater or a cooler. In some cases, the photodetector is a germanium photodetector. In some cases a temperature measuring device is provided. In some cases, a control circuit is used to control the temperature of the germanium photodetector within a temperature range, or at a temperature of interest. An advantage provided by the apparatus described is the operation of the photodetector so that the responsivity of the germanium detector can be held at essentially a constant value.
1. A temperature-controlled photodetector, comprising:
a wafer comprising a semiconductor layer;
a photodetector located on the semiconductor layer, wherein said photodetector has at least one first edge; and
a temperature control element formed at least in part in the semiconductor layer, wherein said temperature control element has a second edge situated proximate said at least one first edge of said photodetector, and wherein said temperature control element comprises at least one of a heater and a cooler.
2. The temperature-controlled photodetector of claim 1 , wherein said photodetector is a germanium photodetector.
3. The temperature-controlled photodetector of claim 1 , wherein said photodetector is disposed within the wafer.
4. The temperature-controlled photodetector of claim 1 , wherein said second edge of said temperature control element is situated within a distance of less than 10 microns from said at least one first edge of said photodetector.
5. The temperature-controlled photodetector of claim 1 , wherein said photodetector is disposed directly upon the semiconductor layer.
6. The temperature-controlled photodetector of claim 1 , wherein said temperature control element is a Peltier device.
7. The temperature-controlled photodetector of claim 1 , further comprising a thermal measurement device formed within the semiconductor layer proximate to said photodetector.
8. The temperature-controlled photodetector sub-system of claim 2 wherein the semiconductor layer comprises a silicon layer and wherein the germanium photodetector is disposed directly upon the silicon layer.
9. The temperature-controlled photodetector of claim 8 , wherein said silicon layer is configured to provide an electrical contact to the germanium photodetector.
10. The temperature-controlled photodetector of claim 1 , wherein said temperature control element comprises two heaters or two coolers.
11. The temperature-controlled photodetector of claim 10 , wherein the two heaters or the two coolers are situated on opposite sides of said photodetector.
12. The temperature-controlled photodetector of claim 1 , wherein the temperature control element comprises a resistive heater.
13. The temperature-controlled photodetector sub-system of claim 1 , further comprising a signal barrier formed in the semiconductor layer between said photodetector and said temperature control element so as to electrically insulate the photodetector from the temperature control element.
14. The temperature-controlled photodetector of claim 13 , wherein said signal barrier is a p-n-p-n junction.
15. A method of making a temperature-controlled photodetector, comprising the steps of:
fabricating a photodetector located on a semiconductor layer of a wafer, wherein said photodetector has at least one first edge; and
fabricating a temperature control element at least in part in the semiconductor layer, said temperature control element having a second edge situated proximate to said first edge of said photodetector, wherein said temperature control element comprises at least one of a heater and a cooler.
16. The method of making a temperature-controlled photodetector of claim 15 comprising forming, upon a substrate, a silicon layer as the semiconductor layer, wherein fabricating the photodetector comprises depositing germanium upon the silicon layer to form a germanium photodetector.
17. The method of making a temperature-controlled photodetector of claim 15 , wherein fabricating said temperature control element comprises forming a resistive heater in the semiconductor layer.
18. The method of making a temperature-controlled photodetector of claim 15 , comprising forming said second edge of said temperature control element less than 10 microns from said at least one first edge of said photodetector.