Bi- and tri-layer interfacial layers in perovskite material devices
Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.
1. A method comprising the steps of:
preparing a lead halide precursor ink, wherein preparing a lead halide precursor ink comprises the steps of:
introducing a lead halide into a vessel;
introducing a first solvent into the vessel;
contacting the lead halide with the first solvent to dissolve the lead halide; and
introducing water into the vessel;
depositing the lead halide precursor ink onto a substrate;
drying the lead halide precursor ink to form a thin film; and
depositing a second solvent and a salt onto the thin film.
2. The method of claim 1 , wherein the lead halide is selected from the group consisting of lead (II) iodide, lead (II) bromide, lead (II) chloride, lead (II) fluoride, and combinations thereof.
3. The method of claim 1 , wherein lead halide comprises a mixture of lead (II) chloride and lead (II) iodide mixed in a ratio of 10 mol of lead (II) chloride to 90 mol of lead (II) iodide.
4. The method of claim 1 , wherein contacting the lead halide with the first solvent to dissolve the lead halide occurs between about 20° C. to about 150° C.
5. The method of claim 1 , further comprising heating the thin film and salt to between about 20° C. to about 300° C.
6. The method of claim 1 , wherein the lead halide precursor ink has a concentration of the lead halide between about 0.1 M and about 5 M.
7. The method of claim 1 , further comprising annealing the thin film, wherein annealing the thin film occurs for up to 24 hours at a temperature between about 20° C. to about 300° C.
8. The method of claim 1 , wherein the lead halide precursor ink is deposited in an atmosphere having greater than or equal to 0 grams H2O per m3 air and less than or equal to 20 grams H2O per m3 air.
9. The method of claim 1 , wherein the salt is selected from the group consisting of methylammonium iodide, formamidinium iodide, guanidinium iodide, 1,2,2-triaminovinylammonium iodide, and 5-aminovaleric acid hydroiodide.
10. The method of claim 1 , wherein the salt is dissolved in the second solvent in a concentration of between about 0.1 M and about 5 M.
11. The method of claim 1 , wherein the salt comprises formamidinium iodide.
12. The method of claim 1 , wherein the water is introduced into the vessel in a concentration of about 1 μL of water to 1 mL of lead halide and solvent to about 100 μL of water to 1 mL of lead halide solvent.
13. A perovskite material prepared by a process comprising the steps of:
preparing a lead halide precursor ink, wherein preparing a lead halide precursor ink comprises the steps of:
introducing a lead halide into a vessel;
introducing a first solvent to the vessel; and
contacting the lead halide with the first solvent to dissolve the lead halide; and
introducing water into the vessel;
depositing the lead halide precursor ink onto a substrate;
drying the lead halide precursor ink to form a thin film; and
depositing a second solvent and a salt onto the thin film.
14. The perovskite material of claim 13 , wherein the lead halide is selected from the group consisting of lead (II) iodide, lead (II) bromide, lead (II) chloride, lead (II) fluoride, and combinations thereof.
15. The perovskite material of claim 13 , wherein the lead halide comprises a mixture of lead (II) chloride and lead (II) iodide mixed in a ratio of 10 mol of lead (II) chloride to 90 mol of lead (II) iodide.
16. The perovskite material of claim 13 , wherein contacting the lead halide with the solvent to dissolve the lead halide occurs between about 20° C. to about 150° C.
17. The perovskite material of claim 13 , further comprising heating the thin film and salt to between about 20° C. to about 300° C.
18. The perovskite material of claim 13 , wherein the lead halide precursor ink has a concentration of the lead halide between about 0.1 M and about 5 M.
19. The perovskite material of claim 13 , further comprising annealing the thin film, wherein annealing the thin film occurs for up to 24 hours at a temperature between about 20° C. to about 300° C.
20. The perovskite material of claim 13 , wherein the lead halide precursor ink is deposited in an atmosphere having greater than or equal to 0 grams H2O per m3 air and less than or equal to 20 grams H2O per m3 air.
21. The perovskite material of claim 13 , wherein the salt is selected from the group consisting of methylammonium iodide, formamidinium iodide, guanidinium iodide, 1,2,2-triaminovinylammonium iodide, and 5-aminovaleric acid hydroiodide.
22. The perovskite material of claim 13 , wherein the salt is dissolved in the second solvent in a concentration of between about 0.1 M and about 5 M.
23. The perovskite material of claim 13 , wherein the salt comprises formamidinium iodide.
24. The perovskite material of claim 13 , wherein the water is introduced into the vessel in a concentration of about 1 μL of water to 1 mL of lead halide and solvent to about 100 μL of water to 1 mL of lead halide solvent.