Highly luminescent nanostructures and methods of producing same
View Patent ↗Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.
1. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 50 nm or less, and wherein the member nanostructures comprise InP and a C5-C8 dicarboxylic acid ligand or a C5-C8 polycarboxylic acid ligand bound to the InP nanostructures.
2. The composition of claim 1 , wherein the population displays a photoluminescence quantum yield of 75% or greater.
3. The composition of claim 1 , wherein the photoluminescence spectrum of the population has a full width at half maximum of 45 nm or less.
4. The composition of claim 3 , wherein the population displays a photoluminescence quantum yield of 75% or greater.
5. The composition of claim 4 , wherein the photoluminescence spectrum of the population has an emission maximum between 500 nm and 540 nm.
6. The composition of claim 1 , wherein the nanostructures are InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0<x<1.
7. The composition of claim 6 , wherein 0.25≦x≦0.75.
8. The composition of claim 6 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å.
9. The composition of claim 8 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.
10. The composition of claim 1 , wherein the nanostructures are quantum dots having an average diameter between about 30 Å and about 36 Å.
11. The composition of claim 10 , wherein the nanostructures comprise InP cores having an average diameter between about 15 Å and about 20 Å.
12. The composition of claim 1 , wherein the nanostructures are embedded in a matrix.
13. A device comprising the composition of claim 1 .
14. A composition comprising a population of nanostructures, which population displays a photoluminescence quantum yield of 70% or greater, wherein a photoluminescence spectrum of the population has a full width at half maximum of 50 nm or less, and wherein the member nanostructures comprise InP, wherein the nanostructures are quantum dots having an average diameter between about 15 Å and about 36 Å.
15. The composition of claim 14 , wherein the population displays a photoluminescence quantum yield of 75% or greater.
16. The composition of claim 14 , wherein the photoluminescence spectrum of the population has a full width at half maximum of 45 nm or less.
17. The composition of claim 16 , wherein the population displays a photoluminescence quantum yield of 75% or greater.
18. The composition of claim 17 , wherein the photoluminescence spectrum of the population has an emission maximum between 500 nm and 540 nm.
19. The composition of claim 14 , wherein the nanostructures are InP/ZnS x Se 1-x /ZnS core/shell quantum dots, where 0<x<1.
20. The composition of claim 19 , wherein 0.25≦x≦0.75.
21. The composition of claim 19 , wherein the InP cores have an average diameter between about 15 Å and about 20 Å.
22. The composition of claim 21 , wherein the ZnS x Se 1-x shell is about 0.5 monolayer thick and the ZnS shell is about 2.0 monolayers thick.
23. The composition of claim 14 , wherein the nanostructures are quantum dots having an average diameter between about 30 Å and about 36 Å.
24. The composition of claim 23 , wherein the nanostructures comprise InP cores having an average diameter between about 15 Å and about 20 Å.
25. The composition of claim 14 , wherein the nanostructures are embedded in a matrix.
26. A device comprising the composition of claim 14 .