IP Library › Granted Patent US 9,577,222

Granted Patent B2

US 9,577,222 · App. 14/869,234 · Granted Feb 21, 2017

Light-emitting device having multi-thickness transparent conductive layers

Inventors: Satoshi Seo (Kanagawa, JP); Ryohei Yamaoka (Kanagawa, JP); Shogo Uesaka (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

H01L51/5265 H01L27/323 H01L27/3211 H01L27/3216 H01L51/504 H01L51/5068 H01L51/5084 H01L51/5088 H01L51/5092 H01L51/5215 H01L51/5221 H01L2251/5376 H01L2251/558

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Quick Facts

Patent No.: US 9,577,222
App. No.: 14/869,234
Granted: Feb 21, 2017
Kind: B2

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USPTO Patent Center↗ Full Patent PDF↗

Abstract

To provide a novel light-emitting device with high productivity, the light-emitting device includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. In the first light-emitting element, a first lower electrode, a first transparent conductive layer, a first light-emitting layer, a second light-emitting layer, and an upper electrode are stacked in this order. In the second light-emitting element, a second lower electrode, a second transparent conductive layer, the first light-emitting layer, the second light-emitting layer, and the upper electrode are stacked in this order. In the third light-emitting element, a third lower electrode, a third transparent conductive layer, the second light-emitting layer, and the upper electrode are stacked in this order. The first transparent conductive layer includes a first region. The second transparent conductive layer includes a second region as thick as the third transparent conductive layer. The first region is thicker than the second region.

Claims (89)

1. A light-emitting device comprising:

a first light-emitting element comprising:

a first lower electrode;

a first transparent conductive layer over the first lower electrode;

an optical adjustment layer over the first transparent conductive layer;

a first light-emitting layer over the optical adjustment layer;

a second light-emitting layer over the first light-emitting layer; and

an upper electrode over the second light-emitting layer;

a second light-emitting element comprising:

a second lower electrode;

a second transparent conductive layer over the second lower electrode;

the optical adjustment layer over the second transparent conductive layer;

the first light-emitting layer over the optical adjustment layer;

the second light-emitting layer over the first light-emitting layer; and

the upper electrode over the second light-emitting layer; and

a third light-emitting element comprising:

a third lower electrode;

a third transparent conductive layer over the third lower electrode;

the second light-emitting layer over the third transparent conductive layer; and

the upper electrode over the second light-emitting layer,

wherein a thickness of the first transparent conductive layer is greater than a thickness of the second transparent conductive layer, and

wherein the thickness of the second transparent conductive layer is substantially the same as a thickness of the third transparent conductive layer.

2. The light-emitting device according to claim 1 ,

wherein the first light-emitting element further comprises a hole-injection layer over the first transparent conductive layer, a hole-transport layer over the hole-injection layer, an electron-transport layer over the second light-emitting layer, and an electron-injection layer over the electron-transport layer,

wherein the second light-emitting element further comprises the hole-injection layer over the second transparent conductive layer, the hole-transport layer over the hole-injection layer, the electron-transport layer over the second light-emitting layer, and the electron-injection layer over the electron-transport layer, and

wherein the third light-emitting element further comprises the hole-injection layer over the third transparent conductive layer, the hole-transport layer over the hole-injection layer, the electron-transport layer over the second light-emitting layer, and the electron-injection layer over the electron-transport layer.

3. The light-emitting device according to claim 1 ,

wherein the first light-emitting element further comprises an electron-injection layer over the first transparent conductive layer, an electron-transport layer over the electron-injection layer, a hole-transport layer over the second light-emitting layer, and a hole-injection layer over the hole-transport layer,

wherein the second light-emitting element further comprises the electron-injection layer over the second transparent conductive layer, the electron-transport layer over the electron-injection layer, the hole-transport layer over the second light-emitting layer, and the hole-injection layer over the hole-transport layer, and

wherein the third light-emitting element further comprises the electron-injection layer over the third transparent conductive layer, the electron-transport layer over the electron-injection layer, the hole-transport layer over the second light-emitting layer, and the hole-injection layer over the hole-transport layer.

4. The light-emitting device according to claim 1 ,

wherein an emission spectrum of the first light-emitting element includes a peak in a wavelength range of longer than or equal to 600 nm and shorter than or equal to 740 nm,

wherein an emission spectrum of the second light-emitting element includes a peak in a wavelength range of longer than or equal to 480 nm and shorter than 600 nm, and

wherein an emission spectrum of the third light-emitting element includes a peak in a wavelength range of longer than or equal to 400 nm and shorter than 480 nm.

5. The light-emitting device according to claim 1 ,

wherein a distance between the first lower electrode and the first light-emitting layer is larger than a distance between the second lower electrode and the first light-emitting layer, and

wherein a distance between the second lower electrode and the second light-emitting layer is larger than a distance between the third lower electrode and the second light-emitting layer.

6. The light-emitting device according to claim 1 ,

wherein an optical path length between the first lower electrode and the first light-emitting layer is 3λ R /4 when λ R is a wavelength of red light,

wherein an optical path length between the second lower electrode and the first light-emitting layer is 3λ G /4 when λ G is a wavelength of green light, and

wherein an optical path length between the third lower electrode and the second light-emitting layer is 3λ B /4 when λ B is a wavelength of blue light.

7. The light-emitting device according to claim 1 ,

wherein the optical adjustment layer has a hole-transport property.

8. The light-emitting device according to claim 1 ,

wherein the first light-emitting layer includes a phosphorescent material, and

wherein the second light-emitting layer includes a fluorescent material.

9. A light-emitting device comprising:

a first light-emitting element comprising:

a first lower electrode;

a first transparent conductive layer over the first lower electrode;

an optical adjustment layer over the first transparent conductive layer;

a first light-emitting layer over the optical adjustment layer; and

a second light-emitting layer over the first light-emitting layer;

a second light-emitting element comprising:

a second lower electrode;

a second transparent conductive layer over the second lower electrode;

the optical adjustment layer over the second transparent conductive layer;

the first light-emitting layer over the optical adjustment layer; and

the second light-emitting layer over the first light-emitting layer;

a third light-emitting element comprising:

a third lower electrode;

a third transparent conductive layer over the third lower electrode; and

the second light-emitting layer over the third transparent conductive layer,

wherein a thickness of the first transparent conductive layer is greater than a thickness of the second transparent conductive layer, and

wherein the thickness of the second transparent conductive layer is substantially the same as a thickness of the third transparent conductive layer.

10. The light-emitting device according to claim 9 ,

11. The light-emitting device according to claim 9 ,

12. The light-emitting device according to claim 9 ,

wherein an emission spectrum of the first light-emitting element includes a peak in a wavelength range of longer than or equal to 600 nm and shorter than or equal to 740 nm,

wherein an emission spectrum of the second light-emitting element includes a peak in a wavelength range of longer than or equal to 480 nm and shorter than 600 nm, and

wherein an emission spectrum of the third light-emitting element includes a peak in a wavelength range of longer than or equal to 400 nm and shorter than 480 nm.

13. The light-emitting device according to claim 9 ,

wherein a distance between the first lower electrode and the first light-emitting layer is larger than a distance between the second lower electrode and the first light-emitting layer, and

wherein a distance between the second lower electrode and the second light-emitting layer is larger than a distance between the third lower electrode and the second light-emitting layer.

14. The light-emitting device according to claim 9 ,

wherein an optical path length between the first lower electrode and the first light-emitting layer is 3λ R /4 when λ R is a wavelength of red light,

wherein an optical path length between the second lower electrode and the first light-emitting layer is 3λ G /4 when λ G is a wavelength of green light, and

wherein an optical path length between the third lower electrode and the second light-emitting layer is 3λ B /4 when λ B is a wavelength of blue light.

15. The light-emitting device according to claim 9 ,

wherein the optical adjustment layer has a hole-transport property.

16. The light-emitting device according to claim 9 ,

wherein the first light-emitting layer includes a phosphorescent material, and

wherein the second light-emitting layer includes a fluorescent material.

Assignments (1)

ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2015

From: SEO, SATOSHI; YAMAOKA, RYOHEI; UESAKA, SHOGO

To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Reel/Frame 036683/0429 →

Priority Claims (2)

JP 2014-200297 · Sep 30, 2014 · national

JP 2014-200298 · Sep 30, 2014 · national

Continuity (1)

Related Publication 20160093678A1 · Mar 31, 2016