Variable resistance memory device
View Patent ↗A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein. A switching device is formed in the first hole. A second insulating layer is formed over the first insulating layer and the second insulating layer includes a second hole. A lower electrode is formed along a surface of the second insulating layer that defines the second hole. A spacer is formed on the lower electrode and exposes a portion of the surface of the lower electrode. A variable resistance material layer is formed in the second hole, and an upper electrode is formed on the variable resistance material layer.
1. A variable resistance memory device, comprising:
a first insulating layer formed on a semiconductor substrate, the first insulating layer having a first hole formed therein;
a switching device formed in the first hole;
a second insulating layer formed over the first insulating layer, the second insulating layer including a second hole configured to expose a surface of the switching device and sidewalls of the second insulating layer;
a lower electrode conformally formed on the surface of the switching device and the sidewalls of the second insulating layer exposed through the second hole;
a spacer conformally formed on a surface of the lower electrode and the sidewalls of the second insulating layer exposed through the second hole, the spacer having a shape of a staircase and exposing a portion of the surface of the lower electrode;
a variable resistance material layer formed on the spacer to fill the second hole; and
an upper electrode formed on the variable resistance material layer,
wherein a length of the lower electrode on the sidewalls of the second insulating layer is longer than a length of the spacer on the sidewalls of the second insulating layer.
2. The variable resistance memory device of claim 1 , wherein a height a portion of the lower electrode that is formed on the sidewalls of the second insulating layer that define the second hole is less than a depth of the second hole by a predetermined height.
3. The variable resistance memory device of claim 2 , wherein the lower electrode is formed of a material that does not contain carbon.
4. The variable resistance memory device of claim 1 , wherein an intersection of the sidewalls of the second insulating layer that define the hole and the surface that defines the bottom of the hole forms an angle of about 80 degrees to about 90 degrees.
5. The variable resistance memory device of claim 1 , wherein the upper electrode directly contacts an upper surface of the variable resistance material layer and an upper surface of the spacer.