IP Library Granted Patent US 9,299,496
Granted Patent B2
US 9,299,496 · App. 14/873,532 · Granted Mar 29, 2016

PLZT capacitor on glass substrate

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,299,496
App. No.
14/873,532
Granted
Mar 29, 2016
Kind
B2
Abstract

A lead-lanthanum-zirconium-titanate (PLZT) capacitor on a substrate formed of glass. The first metallization layer is deposited on a top side of the substrate to form a first electrode. The dielectric layer of PLZT is deposited over the first metallization layer. The second metallization layer deposited over the dielectric layer to form a second electrode. The glass substrate is advantageous as glass is compatible with an annealing process used to form the capacitor.

Claims (13)

1. A capacitor comprising:

a substrate formed of glass;

a first metallization layer deposited on a top side of the substrate to form a first electrode;

a dielectric layer formed of lead-lanthanum-zirconium-titanate (PLZT) deposited over the first metallization layer; and

a second metallization layer deposited over the dielectric layer to form a second electrode.

2. The capacitor in accordance with claim 1 , wherein the glass includes a concentration of sodium (Na) less than ten parts-per-million (10 ppm).

3. The capacitor in accordance with claim 1 , wherein the glass has a thickness less than one-hundred micrometers (100 um).

4. The capacitor in accordance with claim 1 , wherein the first electrode is formed of one of platinum, nickel, copper, and aluminum.

5. The capacitor in accordance with claim 1 , wherein the second electrode is formed of one of platinum, nickel, copper, and aluminum.

6. The capacitor in accordance with claim 1 , wherein the capacitor includes

a third metallization layer deposited on a bottom side of the substrate to form a third electrode;

a second dielectric layer formed of lead-lanthanum-zirconium-titanate (PLZT) deposited over the third metallization layer; and

a fourth metallization layer deposited over the second dielectric layer to form a fourth electrode.

Assignments (4)
CHANGE OF NAME Recorded Sep 18, 2024
From: DELPHI TECHNOLOGIES IP LIMITED
To: BORGWARNER US TECHNOLOGIES LLC
Reel/Frame 068985/0968 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INADVERTENT OMISSION OF PATENT NOS. 9230739, 9299496, AND 9842695 FROM COVER SHEET OF ASSIGNMENT PREVIOUSLY RECORDED ON REEL 045097 FRAME 0048. ASSIGNOR(S) HEREBY CONFIRMS THE CONFIRMATORY ASSIGNMENT. Recorded Apr 24, 2020
From: DELPHI TECHNOLOGIES, INC.
To: DELPHI TECHNOLOGIES IP LIMITED
Reel/Frame 052510/0266 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2018
From: DELPHI TECHNOLOGIES, INC.
To: DELPHI TECHNOLOGIES IP LIMITED
Reel/Frame 045097/0048 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 2, 2015
From: FAIRCHILD, MANUEL RAY; TAYLOR, RALPH S.; BERLIN, CARL W.; WONG, CELINE WK; MA, BEIHAI; BALACHANDRAN, UTHAMALINGAM
To: DELPHI TECHNOLOGIES, INC.; UCHICAGO ARGONNE, LLC
Reel/Frame 036715/0896 →